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Fullerene-based thin films as a novel polycrystalline semiconductor

Research output: Contribution to journal › Conference article › peer-review

14 Scopus citations

Abstract

Recent results of some experimental studies of growth, crystalline and electronic structure of fullerene thin films in connection with the semiconductor properties of the material are reviewed. Some unusual phenomena in fullerene thin films such as a persistent photoconductivity and persistent internal photopolarization are discussed. Advantages and limitations of the material for the possible device applications are illustrated mainly by the results of fullerene-based solar cells construction and investigation.

Original languageEnglish
Pages (from-to)435-446
Number of pages12
JournalSolid State Phenomena
Volume67
DOIs
StatePublished - 1 Jan 1999
EventProceedings of the 1998 5th International Conference on Polycrystalline Semiconductors (POLYSE) - Bulk Materials, Thin Films and Devices - - Schwabisch Gmund, Ger
Duration: 13 Sep 1998 → 18 Sep 1998

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • General Materials Science
  • Condensed Matter Physics

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