Fundamentally new aspects of tunnel diode transitions in multi-junction photovoltaics

Avi Braun; Baruch Hirsch; Eugene A. Katz; Jeffrey M. Gordon; Wolfgang Guter; Andreas W. Bett

doi:10.1117/12.824529

Fundamentally new aspects of tunnel diode transitions in multi-junction photovoltaics

Avi Braun, Baruch Hirsch, Eugene A. Katz, Jeffrey M. Gordon, Wolfgang Guter, Andreas W. Bett

The Swiss Institute for Dryland Environmental and Energy Research

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Tunnel diodes constitute an essential part of multi-junction concentrator photovoltaics. These tunnel junctions exhibit a transition from low-resistance tunneling to high-resistance thermal diffusion, commonly at current densities of the order of 10²-10³ mA/mm². Experimental evidence of a fundamentally new effect is reported and confirmed in distinct cell architectures: the dependence of the threshold current density on the extent of localized irradiation. It is also shown that photovoltaic cells with a non-uniform metal grid can possess an additional spatial dependence to the threshold current density. These new phenomena should be observable in all solar cell tunnel diodes subjected to inhomogeneous illumination, and are posited to stem from the lateral spreading of excess majority carriers (similar to current spreading in LEDs). The implications for concentrator solar cells are also addressed.

Original language	English
Title of host publication	High and Low Concentrator Systems for Solar Electric Applications IV
DOIs	https://doi.org/10.1117/12.824529
State	Published - 1 Dec 2009
Event	High and Low Concentrator Systems for Solar Electric Applications IV - San Diego, CA, United States Duration: 3 Aug 2009 → 5 Aug 2009

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7407
ISSN (Print)	0277-786X

Conference

Conference	High and Low Concentrator Systems for Solar Electric Applications IV
Country/Territory	United States
City	San Diego, CA
Period	3/08/09 → 5/08/09

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1117/12.824529

Cite this

Braun, A., Hirsch, B., Katz, E. A., Gordon, J. M., Guter, W., & Bett, A. W. (2009). Fundamentally new aspects of tunnel diode transitions in multi-junction photovoltaics. In High and Low Concentrator Systems for Solar Electric Applications IV Article 74070C (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7407). https://doi.org/10.1117/12.824529

@inproceedings{c5627cbb7f004ce8a731572b7cc5e55f,

title = "Fundamentally new aspects of tunnel diode transitions in multi-junction photovoltaics",

abstract = "Tunnel diodes constitute an essential part of multi-junction concentrator photovoltaics. These tunnel junctions exhibit a transition from low-resistance tunneling to high-resistance thermal diffusion, commonly at current densities of the order of 102-103 mA/mm2. Experimental evidence of a fundamentally new effect is reported and confirmed in distinct cell architectures: the dependence of the threshold current density on the extent of localized irradiation. It is also shown that photovoltaic cells with a non-uniform metal grid can possess an additional spatial dependence to the threshold current density. These new phenomena should be observable in all solar cell tunnel diodes subjected to inhomogeneous illumination, and are posited to stem from the lateral spreading of excess majority carriers (similar to current spreading in LEDs). The implications for concentrator solar cells are also addressed.",

author = "Avi Braun and Baruch Hirsch and Katz, {Eugene A.} and Gordon, {Jeffrey M.} and Wolfgang Guter and Bett, {Andreas W.}",

year = "2009",

month = dec,

day = "1",

doi = "10.1117/12.824529",

language = "English",

isbn = "9780819476975",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "High and Low Concentrator Systems for Solar Electric Applications IV",

note = "High and Low Concentrator Systems for Solar Electric Applications IV ; Conference date: 03-08-2009 Through 05-08-2009",

}

Braun, A, Hirsch, B, Katz, EA , Gordon, JM, Guter, W & Bett, AW 2009, Fundamentally new aspects of tunnel diode transitions in multi-junction photovoltaics. in High and Low Concentrator Systems for Solar Electric Applications IV., 74070C, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7407, High and Low Concentrator Systems for Solar Electric Applications IV, San Diego, CA, United States, 3/08/09. https://doi.org/10.1117/12.824529

Fundamentally new aspects of tunnel diode transitions in multi-junction photovoltaics. / Braun, Avi; Hirsch, Baruch; Katz, Eugene A. et al.
High and Low Concentrator Systems for Solar Electric Applications IV. 2009. 74070C (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7407).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fundamentally new aspects of tunnel diode transitions in multi-junction photovoltaics

AU - Braun, Avi

AU - Hirsch, Baruch

AU - Katz, Eugene A.

AU - Gordon, Jeffrey M.

AU - Guter, Wolfgang

AU - Bett, Andreas W.

PY - 2009/12/1

Y1 - 2009/12/1

N2 - Tunnel diodes constitute an essential part of multi-junction concentrator photovoltaics. These tunnel junctions exhibit a transition from low-resistance tunneling to high-resistance thermal diffusion, commonly at current densities of the order of 102-103 mA/mm2. Experimental evidence of a fundamentally new effect is reported and confirmed in distinct cell architectures: the dependence of the threshold current density on the extent of localized irradiation. It is also shown that photovoltaic cells with a non-uniform metal grid can possess an additional spatial dependence to the threshold current density. These new phenomena should be observable in all solar cell tunnel diodes subjected to inhomogeneous illumination, and are posited to stem from the lateral spreading of excess majority carriers (similar to current spreading in LEDs). The implications for concentrator solar cells are also addressed.

AB - Tunnel diodes constitute an essential part of multi-junction concentrator photovoltaics. These tunnel junctions exhibit a transition from low-resistance tunneling to high-resistance thermal diffusion, commonly at current densities of the order of 102-103 mA/mm2. Experimental evidence of a fundamentally new effect is reported and confirmed in distinct cell architectures: the dependence of the threshold current density on the extent of localized irradiation. It is also shown that photovoltaic cells with a non-uniform metal grid can possess an additional spatial dependence to the threshold current density. These new phenomena should be observable in all solar cell tunnel diodes subjected to inhomogeneous illumination, and are posited to stem from the lateral spreading of excess majority carriers (similar to current spreading in LEDs). The implications for concentrator solar cells are also addressed.

UR - http://www.scopus.com/inward/record.url?scp=77956805142&partnerID=8YFLogxK

U2 - 10.1117/12.824529

DO - 10.1117/12.824529

M3 - Conference contribution

AN - SCOPUS:77956805142

SN - 9780819476975

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - High and Low Concentrator Systems for Solar Electric Applications IV

T2 - High and Low Concentrator Systems for Solar Electric Applications IV

Y2 - 3 August 2009 through 5 August 2009

ER -

Fundamentally new aspects of tunnel diode transitions in multi-junction photovoltaics

Abstract

Publication series

Conference

ASJC Scopus subject areas

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this