Gain optimization in ion sensitive field-effect transistor based sensor with fully depleted silicon on insulator

Gil Shalev; Amihood Doron; Udi Virobnik; Ariel Cohen; Yosi Sanhedrai; Ilan Levy

doi:10.1063/1.2977476

Gain optimization in ion sensitive field-effect transistor based sensor with fully depleted silicon on insulator

Gil Shalev, Amihood Doron, Udi Virobnik, Ariel Cohen, Yosi Sanhedrai, Ilan Levy

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The sensitivity in bulk silicon (Si) and in silicon-on-insulator (SOI) ion sensitive field-effect transistor (ISFET) is determined according to its manufacturing process, geometry, and the selected materials. However, in SOI ISFETs the back gate biasing plays a major part in device sensitivity. It is shown that in fully depleted SOI ISFET the existing charge coupling between the front and back interfaces allows for gain optimization in terms of both gain increase and widening of the conventional gain peak. This stands in contrast with bulk Si ISFET where only a single channel exists. Here we report gain increase in ∼40% and increase in gain peak width of ∼250%.

Original language	English
Article number	083902
Journal	Applied Physics Letters
Volume	93
Issue number	8
DOIs	https://doi.org/10.1063/1.2977476
State	Published - 15 Sep 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The sensitivity in bulk silicon (Si) and in silicon-on-insulator (SOI) ion sensitive field-effect transistor (ISFET) is determined according to its manufacturing process, geometry, and the selected materials. However, in SOI ISFETs the back gate biasing plays a major part in device sensitivity. It is shown that in fully depleted SOI ISFET the existing charge coupling between the front and back interfaces allows for gain optimization in terms of both gain increase and widening of the conventional gain peak. This stands in contrast with bulk Si ISFET where only a single channel exists. Here we report gain increase in ∼40% and increase in gain peak width of ∼250%.",

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AU - Doron, Amihood

AU - Virobnik, Udi

AU - Cohen, Ariel

AU - Sanhedrai, Yosi

AU - Levy, Ilan

PY - 2008/9/15

Y1 - 2008/9/15

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AB - The sensitivity in bulk silicon (Si) and in silicon-on-insulator (SOI) ion sensitive field-effect transistor (ISFET) is determined according to its manufacturing process, geometry, and the selected materials. However, in SOI ISFETs the back gate biasing plays a major part in device sensitivity. It is shown that in fully depleted SOI ISFET the existing charge coupling between the front and back interfaces allows for gain optimization in terms of both gain increase and widening of the conventional gain peak. This stands in contrast with bulk Si ISFET where only a single channel exists. Here we report gain increase in ∼40% and increase in gain peak width of ∼250%.

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Gain optimization in ion sensitive field-effect transistor based sensor with fully depleted silicon on insulator

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