Wavelength tuning via shallow junction GaAs LEDs as a result of γ-irradiation is increased significantly when the irradiated LEDs are operated in vacuum. Vacuum operation is seen to be essentially equivalent to increased γ-ray doseage for low irradiation levels as a result of desorptive processes common to both phenomena. They give rise to increased radiative surface recombination photon emission. It is this spectrum which is shifted according to changes in surface potential and forward voltage deriving from alterations in surface state populations. This technique is, in principle, a general technique independent of semiconductor material. It suggests the possibility of wavelength tuning via surface band bending changes deriving from surface electric field changes, as is done with MIS devices. Examination of irradiated diode properties in vacuum and under pressure permits greater insight into the basic nature of surface phenomena long suspected to play a significant role in the diode electronic property changes brought about by nuclear irradation.
|Number of pages||7|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - 9 Jan 1984|