Gap micro-lithography for chalcogenide micro-lens array fabrication

M. Manevich; M. Klebanov; V. Lyubin; J. Varshal; J. Broder; N. P. Eisenberg

Gap micro-lithography for chalcogenide micro-lens array fabrication

M. Manevich, M. Klebanov, V. Lyubin, J. Varshal, J. Broder, N. P. Eisenberg

Department of Physics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A newly developed technique, gap micro-lithography, used for the formation of I.R. micro-optical devices such as micro-lens arrays with a very long focal length, is described. The use of a three-component As-S-Se photoresist with a new efficient amine-based selective developer allows for the realization of soft contrast characteristics of the microlithographic process with a Xe-light source. Parameters and characteristics of microoptical devices made using the gap micro-lithography method are discussed.

Original language	English
Pages (from-to)	61-64
Number of pages	4
Journal	Chalcogenide Letters
Volume	5
Issue number	4
State	Published - 1 Jan 2008

Keywords

Chalcogenide glassy film
Chalcogenide photoresist
Gap micro-lithography
Micro-lens array

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Chemistry
General Physics and Astronomy

Cite this

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abstract = "A newly developed technique, gap micro-lithography, used for the formation of I.R. micro-optical devices such as micro-lens arrays with a very long focal length, is described. The use of a three-component As-S-Se photoresist with a new efficient amine-based selective developer allows for the realization of soft contrast characteristics of the microlithographic process with a Xe-light source. Parameters and characteristics of microoptical devices made using the gap micro-lithography method are discussed.",

keywords = "Chalcogenide glassy film, Chalcogenide photoresist, Gap micro-lithography, Micro-lens array",

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T1 - Gap micro-lithography for chalcogenide micro-lens array fabrication

AU - Manevich, M.

AU - Klebanov, M.

AU - Lyubin, V.

AU - Varshal, J.

AU - Broder, J.

AU - Eisenberg, N. P.

PY - 2008/1/1

Y1 - 2008/1/1

N2 - A newly developed technique, gap micro-lithography, used for the formation of I.R. micro-optical devices such as micro-lens arrays with a very long focal length, is described. The use of a three-component As-S-Se photoresist with a new efficient amine-based selective developer allows for the realization of soft contrast characteristics of the microlithographic process with a Xe-light source. Parameters and characteristics of microoptical devices made using the gap micro-lithography method are discussed.

AB - A newly developed technique, gap micro-lithography, used for the formation of I.R. micro-optical devices such as micro-lens arrays with a very long focal length, is described. The use of a three-component As-S-Se photoresist with a new efficient amine-based selective developer allows for the realization of soft contrast characteristics of the microlithographic process with a Xe-light source. Parameters and characteristics of microoptical devices made using the gap micro-lithography method are discussed.

KW - Chalcogenide glassy film

KW - Chalcogenide photoresist

KW - Gap micro-lithography

KW - Micro-lens array

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M3 - Article

AN - SCOPUS:70350364499

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EP - 64

JO - Chalcogenide Letters

JF - Chalcogenide Letters

IS - 4

ER -

Gap micro-lithography for chalcogenide micro-lens array fabrication

Abstract

Keywords

ASJC Scopus subject areas

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