Abstract
A gate-controlled Si-LED is described where the light intensity is modulated via an insulated MOS gate voltage. It is found that the light intensity is a quadratic function of the applied gate voltage. This non-linear relationship facilitates new applications, such as the mixing of electrical input signals and modulating the optical output signal.
| Original language | English |
|---|---|
| Pages | 1157-1160 |
| Number of pages | 4 |
| State | Published - 1 Dec 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1999 5th IEEE AFRICON Conference 'Electrotechnical Services for Africa' - Cape Town, S Afr Duration: 28 Sep 1999 → 1 Oct 1999 |
Conference
| Conference | Proceedings of the 1999 5th IEEE AFRICON Conference 'Electrotechnical Services for Africa' |
|---|---|
| City | Cape Town, S Afr |
| Period | 28/09/99 → 1/10/99 |
ASJC Scopus subject areas
- Computer Science Applications
- Electrical and Electronic Engineering