Gate-controlled silicon light emitting diode

M. du Plessis; H. Aharoni; L. W. Snyman

Gate-controlled silicon light emitting diode

M. du Plessis
, H. Aharoni
, L. W. Snyman

Research output: Contribution to conference › Paper › peer-review

Abstract

A gate-controlled Si-LED is described where the light intensity is modulated via an insulated MOS gate voltage. It is found that the light intensity is a quadratic function of the applied gate voltage. This non-linear relationship facilitates new applications, such as the mixing of electrical input signals and modulating the optical output signal.

Original language	English
Pages	1157-1160
Number of pages	4
State	Published - 1 Dec 1999
Externally published	Yes
Event	Proceedings of the 1999 5th IEEE AFRICON Conference 'Electrotechnical Services for Africa' - Cape Town, S Afr Duration: 28 Sep 1999 → 1 Oct 1999

Conference

Conference	Proceedings of the 1999 5th IEEE AFRICON Conference 'Electrotechnical Services for Africa'
City	Cape Town, S Afr
Period	28/09/99 → 1/10/99

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

Cite this

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title = "Gate-controlled silicon light emitting diode",

abstract = "A gate-controlled Si-LED is described where the light intensity is modulated via an insulated MOS gate voltage. It is found that the light intensity is a quadratic function of the applied gate voltage. This non-linear relationship facilitates new applications, such as the mixing of electrical input signals and modulating the optical output signal.",

author = "\{du Plessis\}, M. and H. Aharoni and Snyman, \{L. W.\}",

year = "1999",

month = dec,

day = "1",

language = "English",

pages = "1157--1160",

note = "Proceedings of the 1999 5th IEEE AFRICON Conference 'Electrotechnical Services for Africa' ; Conference date: 28-09-1999 Through 01-10-1999",

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T1 - Gate-controlled silicon light emitting diode

AU - du Plessis, M.

AU - Aharoni, H.

AU - Snyman, L. W.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - A gate-controlled Si-LED is described where the light intensity is modulated via an insulated MOS gate voltage. It is found that the light intensity is a quadratic function of the applied gate voltage. This non-linear relationship facilitates new applications, such as the mixing of electrical input signals and modulating the optical output signal.

AB - A gate-controlled Si-LED is described where the light intensity is modulated via an insulated MOS gate voltage. It is found that the light intensity is a quadratic function of the applied gate voltage. This non-linear relationship facilitates new applications, such as the mixing of electrical input signals and modulating the optical output signal.

UR - https://www.scopus.com/pages/publications/0033348282

M3 - Paper

AN - SCOPUS:0033348282

SP - 1157

EP - 1160

T2 - Proceedings of the 1999 5th IEEE AFRICON Conference 'Electrotechnical Services for Africa'

Y2 - 28 September 1999 through 1 October 1999

ER -

Gate-controlled silicon light emitting diode

Abstract

Conference

ASJC Scopus subject areas

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