TY - GEN
T1 - Gate Diffusion Input (GDI) logic in standard CMOS nanoscale process
AU - Morgenshtein, Arkadiy
AU - Shwartz, Idan
AU - Fish, Alexander
PY - 2010/12/1
Y1 - 2010/12/1
N2 - In this paper CMOS compatible Gate Diffusion Input (GDI) design technique is proposed. The GDI method enables the implementation of a wide range of complex logic functions using only two transistors. This method is suitable for the design of low-power logic gates, with a much smaller area than Static CMOS and existing PTL techniques. As opposite to our originally proposed GDI logic, the modified GDI logic is fully compatible for implementation in a standard CMOS process. Simulations of basic GDI gates under process and temperature corners in 40nm CMOS process are shown and compared to similar CMOS gates. We show that while having the same delay, GDI gates achieve leakage and active power reduction of up to 70% and 50%, respectively.
AB - In this paper CMOS compatible Gate Diffusion Input (GDI) design technique is proposed. The GDI method enables the implementation of a wide range of complex logic functions using only two transistors. This method is suitable for the design of low-power logic gates, with a much smaller area than Static CMOS and existing PTL techniques. As opposite to our originally proposed GDI logic, the modified GDI logic is fully compatible for implementation in a standard CMOS process. Simulations of basic GDI gates under process and temperature corners in 40nm CMOS process are shown and compared to similar CMOS gates. We show that while having the same delay, GDI gates achieve leakage and active power reduction of up to 70% and 50%, respectively.
KW - GDI
KW - Gate diffusion input
KW - Low power digital design
KW - Pass-transistor logic
UR - http://www.scopus.com/inward/record.url?scp=78651253401&partnerID=8YFLogxK
U2 - 10.1109/EEEI.2010.5662107
DO - 10.1109/EEEI.2010.5662107
M3 - Conference contribution
AN - SCOPUS:78651253401
SN - 9781424486809
T3 - 2010 IEEE 26th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2010
SP - 776
EP - 780
BT - 2010 IEEE 26th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2010
T2 - 2010 IEEE 26th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2010
Y2 - 17 November 2010 through 20 November 2010
ER -