TY - JOUR
T1 - GeS Phases from First-Principles
T2 - Structure Prediction, Optical Properties, and Phase Transitions upon Compression
AU - Nguyen, Long Truong
AU - Makov, Guy
N1 - Publisher Copyright:
© 2022 American Chemical Society.
PY - 2022/8/3
Y1 - 2022/8/3
N2 - The structures of GeS beyond the orthorhombic α-Pnma phase are explored by density functional theory calculations of the energetics and phonon spectra guided by an evolutionary algorithm. We found six new, dynamically stable structures at ambient conditions, close to the ground state. Our study of the electronic and optical properties of these unconventional phases indicates distinct differences from α-Pnma GeS. The band gaps of the new phases vary in the range of 0.39-1.59 eV, and their optical properties are attractive for optoelectronic applications. Upon compression, the new GeS structure denoted as γ-Pnma (analog to γ-Pnma SnSe) is thermodynamically preferred over α-Pnma at 15 GPa. At higher pressures, the GeS structure converges to a Cmcm-like structure at 30 GPa. Finally, cubic Pm3¯ m is the favorable and stable phase at 70 GPa. The mechanism of the pressure-induced transition correlates with the delocalization of the lone pairs.
AB - The structures of GeS beyond the orthorhombic α-Pnma phase are explored by density functional theory calculations of the energetics and phonon spectra guided by an evolutionary algorithm. We found six new, dynamically stable structures at ambient conditions, close to the ground state. Our study of the electronic and optical properties of these unconventional phases indicates distinct differences from α-Pnma GeS. The band gaps of the new phases vary in the range of 0.39-1.59 eV, and their optical properties are attractive for optoelectronic applications. Upon compression, the new GeS structure denoted as γ-Pnma (analog to γ-Pnma SnSe) is thermodynamically preferred over α-Pnma at 15 GPa. At higher pressures, the GeS structure converges to a Cmcm-like structure at 30 GPa. Finally, cubic Pm3¯ m is the favorable and stable phase at 70 GPa. The mechanism of the pressure-induced transition correlates with the delocalization of the lone pairs.
UR - http://www.scopus.com/inward/record.url?scp=85134834565&partnerID=8YFLogxK
U2 - 10.1021/acs.cgd.2c00497
DO - 10.1021/acs.cgd.2c00497
M3 - Article
AN - SCOPUS:85134834565
SN - 1528-7483
VL - 22
SP - 4956
EP - 4969
JO - Crystal Growth and Design
JF - Crystal Growth and Design
IS - 8
ER -