Abstract
We report the complex dielectric function of the quasi-one-dimensional chalcogenide Ta2NiSe5, which undergoes a structural phase transition presumably associated with exciton condensation below Tc=326 K [Y. Wakisaka, Phys. Rev. Lett. 103, 026402 (2009)PRLTAO0031-900710.1103/PhysRevLett.103.026402; Y. F. Lu, Nat. Commun. 8, 14408 (2017)2041-172310.1038/ncomms14408], and of the isostructural Ta2NiS5, which does not exhibit such a transition. Using spectroscopic ellipsometry, we have detected exciton doublets with pronounced Fano line shapes in both the compounds. The exciton Fano resonances in Ta2NiSe5 display an order-of-magnitude higher intensity than those in Ta2NiS5. In conjunction with prior theoretical work [E. Rashba, Sov. Phys. Semicond. 8, 807 (1975)], we attribute this observation to the giant oscillator strength of spatially extended exciton-phonon bound states in Ta2NiSe5. The formation of exciton-phonon complexes in Ta2NiS5 and Ta2NiSe5 is confirmed by the pronounced temperature dependence of sharp interband transitions in the optical spectra, the peak energies and widths of which scale with the thermal population of optical phonon modes. The description of the optically excited states in terms of strongly overlapping exciton complexes is in good agreement with the hypothesis of an exciton insulator ground state.
Original language | English |
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Article number | 195144 |
Journal | Physical Review B |
Volume | 95 |
Issue number | 19 |
DOIs | |
State | Published - 19 May 2017 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics