Glassy mAs2S3·nAs2Se3 photoresist films for interference laser lithography

A. Arsh, M. Klebanov, V. Lyubin, L. Shapiro, A. Feigel, M. Veinger, B. Sfez

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

Spectra of refractive index and selective dissolution of several glassy mAs2S3·nAs2Se3 films are studied. These results permitted to select efficient photoresist compositions for interference laser lithography, performed with Ar+-, He-Ne- and Nd:YAG-laser beams, and to fabricate the two- and three-dimensional photonic crystals.

Original languageEnglish
Pages (from-to)301-304
Number of pages4
JournalOptical Materials
Volume26
Issue number3
DOIs
StatePublished - 1 Jan 2004

Keywords

  • Chalcogenide glassy films
  • Interference laser lithography
  • Photonic crystals
  • Spectra of refractive index

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Computer Science
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

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