Gold metallization for aluminum nitride

I. Shalish; S. M. Gasser; E. Kolawa; M. A. Nicolet; R. P. Ruiz

doi:10.1016/S0040-6090(96)08919-5

Gold metallization for aluminum nitride

I. Shalish, S. M. Gasser, E. Kolawa, M. A. Nicolet, R. P. Ruiz

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A metallization scheme for gold on AlN is investigated that incorporates three layers sputter-deposited in succession on the AlN substrate, without breaking vacuum: 20 nm of Ti to promote adhesion, a 100 nm thick Ti-Si-N barrier layer, and 230 nm Au. The stability of the scheme was studied after annealing in vacuum up to 800°C for 30 min and at 400°C in Ar ambient for 300 h, using 2 MeV ⁴He⁺⁺ backscattering spectrometry, sheet resistance measurements, and adhesion tests. It is shown that the incorporation of the diffusion barrier prevents the interaction of the Ti from the adhesion layer with the gold layer and thereby preserves the integrity of the metallization scheme. This metallization scheme may be applicable to other substrate materials.

Original language	English
Pages (from-to)	166-169
Number of pages	4
Journal	Thin Solid Films
Volume	289
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(96)08919-5
State	Published - 30 Nov 1996
Externally published	Yes

Keywords

Aluminium nitride
Gold
Metals

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(96)08919-5

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title = "Gold metallization for aluminum nitride",

abstract = "A metallization scheme for gold on AlN is investigated that incorporates three layers sputter-deposited in succession on the AlN substrate, without breaking vacuum: 20 nm of Ti to promote adhesion, a 100 nm thick Ti-Si-N barrier layer, and 230 nm Au. The stability of the scheme was studied after annealing in vacuum up to 800°C for 30 min and at 400°C in Ar ambient for 300 h, using 2 MeV 4He++ backscattering spectrometry, sheet resistance measurements, and adhesion tests. It is shown that the incorporation of the diffusion barrier prevents the interaction of the Ti from the adhesion layer with the gold layer and thereby preserves the integrity of the metallization scheme. This metallization scheme may be applicable to other substrate materials.",

keywords = "Aluminium nitride, Gold, Metals",

author = "I. Shalish and Gasser, {S. M.} and E. Kolawa and Nicolet, {M. A.} and Ruiz, {R. P.}",

note = "Funding Information: We gratefully acknowledge the technical assistance of R. Gores and M. Easterhrook and thank Dr. Michael Tenhover, The Caromndum Company, for supplying the AIN substrates. The project was made possible by support from the National Science Foundation.",

year = "1996",

month = nov,

day = "30",

doi = "10.1016/S0040-6090(96)08919-5",

language = "English",

volume = "289",

pages = "166--169",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Gold metallization for aluminum nitride

AU - Shalish, I.

AU - Gasser, S. M.

AU - Kolawa, E.

AU - Nicolet, M. A.

AU - Ruiz, R. P.

N1 - Funding Information: We gratefully acknowledge the technical assistance of R. Gores and M. Easterhrook and thank Dr. Michael Tenhover, The Caromndum Company, for supplying the AIN substrates. The project was made possible by support from the National Science Foundation.

PY - 1996/11/30

Y1 - 1996/11/30

N2 - A metallization scheme for gold on AlN is investigated that incorporates three layers sputter-deposited in succession on the AlN substrate, without breaking vacuum: 20 nm of Ti to promote adhesion, a 100 nm thick Ti-Si-N barrier layer, and 230 nm Au. The stability of the scheme was studied after annealing in vacuum up to 800°C for 30 min and at 400°C in Ar ambient for 300 h, using 2 MeV 4He++ backscattering spectrometry, sheet resistance measurements, and adhesion tests. It is shown that the incorporation of the diffusion barrier prevents the interaction of the Ti from the adhesion layer with the gold layer and thereby preserves the integrity of the metallization scheme. This metallization scheme may be applicable to other substrate materials.

AB - A metallization scheme for gold on AlN is investigated that incorporates three layers sputter-deposited in succession on the AlN substrate, without breaking vacuum: 20 nm of Ti to promote adhesion, a 100 nm thick Ti-Si-N barrier layer, and 230 nm Au. The stability of the scheme was studied after annealing in vacuum up to 800°C for 30 min and at 400°C in Ar ambient for 300 h, using 2 MeV 4He++ backscattering spectrometry, sheet resistance measurements, and adhesion tests. It is shown that the incorporation of the diffusion barrier prevents the interaction of the Ti from the adhesion layer with the gold layer and thereby preserves the integrity of the metallization scheme. This metallization scheme may be applicable to other substrate materials.

KW - Aluminium nitride

KW - Gold

KW - Metals

UR - http://www.scopus.com/inward/record.url?scp=0030291115&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(96)08919-5

DO - 10.1016/S0040-6090(96)08919-5

M3 - Article

AN - SCOPUS:0030291115

SN - 0040-6090

VL - 289

SP - 166

EP - 169

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Gold metallization for aluminum nitride

Abstract

Keywords

ASJC Scopus subject areas

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