Growth and characterization of InAs sub-monolayer quantum dots with varying fractional coverage

S. Mukherjee; A. Pradhan; S. Mukherje; T. Maitra; S. Sengupta; S. Chakrabarti; A. Nayak; S. Bhunia

doi:10.1063/1.5028873

Growth and characterization of InAs sub-monolayer quantum dots with varying fractional coverage

S. Mukherjee, A. Pradhan, S. Mukherje, T. Maitra, S. Sengupta, S. Chakrabarti, A. Nayak, S. Bhunia

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

We have studied the optical properties of InAs sub monolayer (SML) quantum dots in GaAs quantum well with InAs average deposition below one monolayer (ML) [0.3 - 0.8 ML] in Molecular Beam Epitaxy (MBE) growth system. The samples have exhibited sharp photoluminescence peak at low temperature (3.3 K) which could be tuned in the near infrared (NIR) region (1.42 eV-1.47 eV) by controlling the InAs SML coverage.

Original language	English
Title of host publication	DAE Solid State Physics Symposium 2017
Editors	Amitabh Das, Surendra Singh, Arup Biswas
Publisher	American Institute of Physics Inc.
ISBN (Electronic)	9780735416345
DOIs	https://doi.org/10.1063/1.5028873
State	Published - 10 Apr 2018
Externally published	Yes
Event	62nd DAE Solid State Physics Symposium 2017 - Anushaktinagar, Mumbai, India Duration: 26 Dec 2017 → 30 Dec 2017

Publication series

Name	AIP Conference Proceedings
Volume	1942
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	62nd DAE Solid State Physics Symposium 2017
Country/Territory	India
City	Anushaktinagar, Mumbai
Period	26/12/17 → 30/12/17

ASJC Scopus subject areas

Physics and Astronomy (all)

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10.1063/1.5028873

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Mukherjee, S., Pradhan, A., Mukherje, S., Maitra, T., Sengupta, S., Chakrabarti, S., Nayak, A., & Bhunia, S. (2018). Growth and characterization of InAs sub-monolayer quantum dots with varying fractional coverage. In A. Das, S. Singh, & A. Biswas (Eds.), DAE Solid State Physics Symposium 2017 [080039] (AIP Conference Proceedings; Vol. 1942). American Institute of Physics Inc.. https://doi.org/10.1063/1.5028873

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title = "Growth and characterization of InAs sub-monolayer quantum dots with varying fractional coverage",

abstract = "We have studied the optical properties of InAs sub monolayer (SML) quantum dots in GaAs quantum well with InAs average deposition below one monolayer (ML) [0.3 - 0.8 ML] in Molecular Beam Epitaxy (MBE) growth system. The samples have exhibited sharp photoluminescence peak at low temperature (3.3 K) which could be tuned in the near infrared (NIR) region (1.42 eV-1.47 eV) by controlling the InAs SML coverage.",

author = "S. Mukherjee and A. Pradhan and S. Mukherje and T. Maitra and S. Sengupta and S. Chakrabarti and A. Nayak and S. Bhunia",

note = "Publisher Copyright: {\textcopyright} 2018 Author(s).; 62nd DAE Solid State Physics Symposium 2017 ; Conference date: 26-12-2017 Through 30-12-2017",

year = "2018",

month = apr,

day = "10",

doi = "10.1063/1.5028873",

language = "English",

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Mukherjee, S, Pradhan, A, Mukherje, S, Maitra, T, Sengupta, S, Chakrabarti, S, Nayak, A & Bhunia, S 2018, Growth and characterization of InAs sub-monolayer quantum dots with varying fractional coverage. in A Das, S Singh & A Biswas (eds), DAE Solid State Physics Symposium 2017., 080039, AIP Conference Proceedings, vol. 1942, American Institute of Physics Inc., 62nd DAE Solid State Physics Symposium 2017, Anushaktinagar, Mumbai, India, 26/12/17. https://doi.org/10.1063/1.5028873

Growth and characterization of InAs sub-monolayer quantum dots with varying fractional coverage. / Mukherjee, S.; Pradhan, A.; Mukherje, S. et al.

DAE Solid State Physics Symposium 2017. ed. / Amitabh Das; Surendra Singh; Arup Biswas. American Institute of Physics Inc., 2018. 080039 (AIP Conference Proceedings; Vol. 1942).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Growth and characterization of InAs sub-monolayer quantum dots with varying fractional coverage

AU - Mukherjee, S.

AU - Pradhan, A.

AU - Mukherje, S.

AU - Maitra, T.

AU - Sengupta, S.

AU - Chakrabarti, S.

AU - Nayak, A.

AU - Bhunia, S.

PY - 2018/4/10

Y1 - 2018/4/10

N2 - We have studied the optical properties of InAs sub monolayer (SML) quantum dots in GaAs quantum well with InAs average deposition below one monolayer (ML) [0.3 - 0.8 ML] in Molecular Beam Epitaxy (MBE) growth system. The samples have exhibited sharp photoluminescence peak at low temperature (3.3 K) which could be tuned in the near infrared (NIR) region (1.42 eV-1.47 eV) by controlling the InAs SML coverage.

AB - We have studied the optical properties of InAs sub monolayer (SML) quantum dots in GaAs quantum well with InAs average deposition below one monolayer (ML) [0.3 - 0.8 ML] in Molecular Beam Epitaxy (MBE) growth system. The samples have exhibited sharp photoluminescence peak at low temperature (3.3 K) which could be tuned in the near infrared (NIR) region (1.42 eV-1.47 eV) by controlling the InAs SML coverage.

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U2 - 10.1063/1.5028873

DO - 10.1063/1.5028873

M3 - Conference contribution

AN - SCOPUS:85045729081

T3 - AIP Conference Proceedings

BT - DAE Solid State Physics Symposium 2017

A2 - Das, Amitabh

A2 - Singh, Surendra

A2 - Biswas, Arup

PB - American Institute of Physics Inc.

T2 - 62nd DAE Solid State Physics Symposium 2017

Y2 - 26 December 2017 through 30 December 2017

ER -

Growth and characterization of InAs sub-monolayer quantum dots with varying fractional coverage

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