Growth and characterization of InAs sub-monolayer quantum dots with varying fractional coverage

S. Mukherjee, A. Pradhan, S. Mukherje, T. Maitra, S. Sengupta, S. Chakrabarti, A. Nayak, S. Bhunia

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

We have studied the optical properties of InAs sub monolayer (SML) quantum dots in GaAs quantum well with InAs average deposition below one monolayer (ML) [0.3 - 0.8 ML] in Molecular Beam Epitaxy (MBE) growth system. The samples have exhibited sharp photoluminescence peak at low temperature (3.3 K) which could be tuned in the near infrared (NIR) region (1.42 eV-1.47 eV) by controlling the InAs SML coverage.

Original languageEnglish
Title of host publicationDAE Solid State Physics Symposium 2017
EditorsAmitabh Das, Surendra Singh, Arup Biswas
PublisherAmerican Institute of Physics Inc.
ISBN (Electronic)9780735416345
DOIs
StatePublished - 10 Apr 2018
Externally publishedYes
Event62nd DAE Solid State Physics Symposium 2017 - Anushaktinagar, Mumbai, India
Duration: 26 Dec 201730 Dec 2017

Publication series

NameAIP Conference Proceedings
Volume1942
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference62nd DAE Solid State Physics Symposium 2017
Country/TerritoryIndia
CityAnushaktinagar, Mumbai
Period26/12/1730/12/17

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