Growth and characterization of PbTe films by magnetron sputtering

A. Jdanov; J. Pelleg; Z. Dashevsky; R. Shneck

doi:10.1016/j.mseb.2003.09.026

Growth and characterization of PbTe films by magnetron sputtering

A. Jdanov
, J. Pelleg
, Z. Dashevsky
, R. Shneck

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

Thin films of PbTe were sputter deposited on Si (111) wafers and glass substrates. A constant power for different times and various power levels for a constant time were applied on PbTe target. Heated and unheated substrates were used. The substrate heating to a temperature of ∼673K was performed in situ during sputtering. Structural analysis by X-ray diffraction (XRD) and high-resolution electron microscopy (HRTEM) were performed. The composition of the PbTe film was evaluated by Auger depth profile. At an appropriate combination of power and deposition time only (200) and its higher order peaks were observed in the PbTe film. PbTe films with different thicknesses in the range of 80-300nm were deposited on the wafers. XRD data indicate that the (200) texture is influenced by the film thickness.

Original language	English
Pages (from-to)	89-94
Number of pages	6
Journal	Materials Science and Engineering: B
Volume	106
Issue number	1
DOIs	https://doi.org/10.1016/j.mseb.2003.09.026
State	Published - 15 Jan 2004

Keywords

Epitaxial-like film
Magnetron sputtering
PbTe
Si (1 1 1)

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2003.09.026

Cite this

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title = "Growth and characterization of PbTe films by magnetron sputtering",

abstract = "Thin films of PbTe were sputter deposited on Si (111) wafers and glass substrates. A constant power for different times and various power levels for a constant time were applied on PbTe target. Heated and unheated substrates were used. The substrate heating to a temperature of ∼673K was performed in situ during sputtering. Structural analysis by X-ray diffraction (XRD) and high-resolution electron microscopy (HRTEM) were performed. The composition of the PbTe film was evaluated by Auger depth profile. At an appropriate combination of power and deposition time only (200) and its higher order peaks were observed in the PbTe film. PbTe films with different thicknesses in the range of 80-300nm were deposited on the wafers. XRD data indicate that the (200) texture is influenced by the film thickness.",

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author = "A. Jdanov and J. Pelleg and Z. Dashevsky and R. Shneck",

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T1 - Growth and characterization of PbTe films by magnetron sputtering

AU - Jdanov, A.

AU - Pelleg, J.

AU - Dashevsky, Z.

AU - Shneck, R.

PY - 2004/1/15

Y1 - 2004/1/15

N2 - Thin films of PbTe were sputter deposited on Si (111) wafers and glass substrates. A constant power for different times and various power levels for a constant time were applied on PbTe target. Heated and unheated substrates were used. The substrate heating to a temperature of ∼673K was performed in situ during sputtering. Structural analysis by X-ray diffraction (XRD) and high-resolution electron microscopy (HRTEM) were performed. The composition of the PbTe film was evaluated by Auger depth profile. At an appropriate combination of power and deposition time only (200) and its higher order peaks were observed in the PbTe film. PbTe films with different thicknesses in the range of 80-300nm were deposited on the wafers. XRD data indicate that the (200) texture is influenced by the film thickness.

AB - Thin films of PbTe were sputter deposited on Si (111) wafers and glass substrates. A constant power for different times and various power levels for a constant time were applied on PbTe target. Heated and unheated substrates were used. The substrate heating to a temperature of ∼673K was performed in situ during sputtering. Structural analysis by X-ray diffraction (XRD) and high-resolution electron microscopy (HRTEM) were performed. The composition of the PbTe film was evaluated by Auger depth profile. At an appropriate combination of power and deposition time only (200) and its higher order peaks were observed in the PbTe film. PbTe films with different thicknesses in the range of 80-300nm were deposited on the wafers. XRD data indicate that the (200) texture is influenced by the film thickness.

KW - Epitaxial-like film

KW - Magnetron sputtering

KW - PbTe

KW - Si (1 1 1)

UR - https://www.scopus.com/pages/publications/0344877364

U2 - 10.1016/j.mseb.2003.09.026

DO - 10.1016/j.mseb.2003.09.026

M3 - Article

AN - SCOPUS:0344877364

SN - 0921-5107

VL - 106

SP - 89

EP - 94

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1

ER -

Growth and characterization of PbTe films by magnetron sputtering

Abstract

Keywords

ASJC Scopus subject areas

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