Growth controlled fabrication and cathodoluminescence study of 3D confined GaAs volumes on non-planar patterned GaAs(0 0 1) substrates

A. Konkar, H. T. Lin, D. H. Rich, P. Chen, A. Madhukar

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We report on (a) the effect of growth interruption on the growth profile evolution in growth on non-planar patterned mesa tops via substrate-encoded size-reducing epitaxy (SESRE) and (b) the optical behavior of isolated 3D-confined GaAs volumes as well as 3D-confined GaAs volumes coupled with 1D-confined quantum wells (QWs) fabricated by SESRE. Steady-state excitation and time-resolved cathodoluminescence (CL) are used for these optical studies.

Original languageEnglish
Pages (from-to)741-746
Number of pages6
JournalJournal of Crystal Growth
Volume175-176
Issue numberPART 2
DOIs
StatePublished - 1 Jan 1997
Externally publishedYes

Keywords

  • Growth interruption
  • Patterned substrate
  • Quantum boxes
  • Time-resolved cathodoluminescence

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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