Growth controlled fabrication and cathodoluminescence study of 3D confined GaAs volumes on non-planar patterned GaAs(0 0 1) substrates

A. Konkar; H. T. Lin; D. H. Rich; P. Chen; A. Madhukar

doi:10.1016/S0022-0248(96)00973-6

Growth controlled fabrication and cathodoluminescence study of 3D confined GaAs volumes on non-planar patterned GaAs(0 0 1) substrates

A. Konkar, H. T. Lin, D. H. Rich, P. Chen, A. Madhukar

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We report on (a) the effect of growth interruption on the growth profile evolution in growth on non-planar patterned mesa tops via substrate-encoded size-reducing epitaxy (SESRE) and (b) the optical behavior of isolated 3D-confined GaAs volumes as well as 3D-confined GaAs volumes coupled with 1D-confined quantum wells (QWs) fabricated by SESRE. Steady-state excitation and time-resolved cathodoluminescence (CL) are used for these optical studies.

Original language	English
Pages (from-to)	741-746
Number of pages	6
Journal	Journal of Crystal Growth
Volume	175-176
Issue number	PART 2
DOIs	https://doi.org/10.1016/S0022-0248(96)00973-6
State	Published - 1 Jan 1997
Externally published	Yes

Keywords

Growth interruption
Patterned substrate
Quantum boxes
Time-resolved cathodoluminescence

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(96)00973-6

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title = "Growth controlled fabrication and cathodoluminescence study of 3D confined GaAs volumes on non-planar patterned GaAs(0 0 1) substrates",

abstract = "We report on (a) the effect of growth interruption on the growth profile evolution in growth on non-planar patterned mesa tops via substrate-encoded size-reducing epitaxy (SESRE) and (b) the optical behavior of isolated 3D-confined GaAs volumes as well as 3D-confined GaAs volumes coupled with 1D-confined quantum wells (QWs) fabricated by SESRE. Steady-state excitation and time-resolved cathodoluminescence (CL) are used for these optical studies.",

keywords = "Growth interruption, Patterned substrate, Quantum boxes, Time-resolved cathodoluminescence",

author = "A. Konkar and Lin, {H. T.} and Rich, {D. H.} and P. Chen and A. Madhukar",

note = "Funding Information: This work was supported by AFOSR, ONR, and NSF (RIA-ECS).",

year = "1997",

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doi = "10.1016/S0022-0248(96)00973-6",

language = "English",

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T1 - Growth controlled fabrication and cathodoluminescence study of 3D confined GaAs volumes on non-planar patterned GaAs(0 0 1) substrates

AU - Konkar, A.

AU - Lin, H. T.

AU - Rich, D. H.

AU - Chen, P.

AU - Madhukar, A.

N1 - Funding Information: This work was supported by AFOSR, ONR, and NSF (RIA-ECS).

PY - 1997/1/1

Y1 - 1997/1/1

N2 - We report on (a) the effect of growth interruption on the growth profile evolution in growth on non-planar patterned mesa tops via substrate-encoded size-reducing epitaxy (SESRE) and (b) the optical behavior of isolated 3D-confined GaAs volumes as well as 3D-confined GaAs volumes coupled with 1D-confined quantum wells (QWs) fabricated by SESRE. Steady-state excitation and time-resolved cathodoluminescence (CL) are used for these optical studies.

AB - We report on (a) the effect of growth interruption on the growth profile evolution in growth on non-planar patterned mesa tops via substrate-encoded size-reducing epitaxy (SESRE) and (b) the optical behavior of isolated 3D-confined GaAs volumes as well as 3D-confined GaAs volumes coupled with 1D-confined quantum wells (QWs) fabricated by SESRE. Steady-state excitation and time-resolved cathodoluminescence (CL) are used for these optical studies.

KW - Growth interruption

KW - Patterned substrate

KW - Quantum boxes

KW - Time-resolved cathodoluminescence

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VL - 175-176

SP - 741

EP - 746

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - PART 2

ER -

Growth controlled fabrication and cathodoluminescence study of 3D confined GaAs volumes on non-planar patterned GaAs(0 0 1) substrates

Abstract

Keywords

ASJC Scopus subject areas

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