Growth of (1 1 1)-oriented PbTe thin films on vicinal Si(1 1 1) and on Si(1 0 0) using fluoride buffers

A. Belenchuk; O. Shapoval; V. Kantser; A. Fedorov; P. Schunk; Th Schimmel; Z. Dashevsky

doi:10.1016/S0022-0248(98)01044-6

Growth of (1 1 1)-oriented PbTe thin films on vicinal Si(1 1 1) and on Si(1 0 0) using fluoride buffers

A. Belenchuk, O. Shapoval, V. Kantser, A. Fedorov, P. Schunk, Th Schimmel, Z. Dashevsky

Department of Materials Engineering

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

High-quality PbTe films have been grown on vicinal Si(1 1 1) using both stacked BaF₂-CaF₂ buffers and single BaF₂ layers deposited directly on Si by the two-step growth method. Unlike on exactly oriented Si(1 1 1), the surface morphology of PbTe grown on vicinal Si(1 1 1) was undulated due to bunched steps on the BaF₂ surface. The BaF₂ buffer layers and the PbTe films grown on Si(1 0 0) consist of domains rotated by 90° and 180° around the normal to the surface, with the (1 1 1) BaF₂ and the (1 1 1) PbTe planes parallel to the (1 0 0) Si plane. Although the PbTe films grown on Si(1 0 0) have domain structures, the mobility of carriers at 300 K is the same as in PbTe films grown on Si(1 1 1) and these heterostructures are capable of relieving the thermal mismatch strain.

Original language	English
Pages (from-to)	1216-1221
Number of pages	6
Journal	Journal of Crystal Growth
Volume	198-199
Issue number	pt 2
DOIs	https://doi.org/10.1016/S0022-0248(98)01044-6
State	Published - 1 Jan 1999
Event	Proceedings of the 1998 10th International Conference on Vapor Growth and Epitaxy and Specialist Workshops on Crystal Growth, ICVGE-10 - Jerusalem, Isr Duration: 26 Jul 1998 → 31 Jul 1998

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(98)01044-6

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title = "Growth of (1 1 1)-oriented PbTe thin films on vicinal Si(1 1 1) and on Si(1 0 0) using fluoride buffers",

abstract = "High-quality PbTe films have been grown on vicinal Si(1 1 1) using both stacked BaF2-CaF2 buffers and single BaF2 layers deposited directly on Si by the two-step growth method. Unlike on exactly oriented Si(1 1 1), the surface morphology of PbTe grown on vicinal Si(1 1 1) was undulated due to bunched steps on the BaF2 surface. The BaF2 buffer layers and the PbTe films grown on Si(1 0 0) consist of domains rotated by 90° and 180° around the normal to the surface, with the (1 1 1) BaF2 and the (1 1 1) PbTe planes parallel to the (1 0 0) Si plane. Although the PbTe films grown on Si(1 0 0) have domain structures, the mobility of carriers at 300 K is the same as in PbTe films grown on Si(1 1 1) and these heterostructures are capable of relieving the thermal mismatch strain.",

author = "A. Belenchuk and O. Shapoval and V. Kantser and A. Fedorov and P. Schunk and Th Schimmel and Z. Dashevsky",

note = "Funding Information: The authors are thankful to Dr. V. Moshnyaga for helpful discussions. This research has been supported in part by INTAS project 96-0535.; Proceedings of the 1998 10th International Conference on Vapor Growth and Epitaxy and Specialist Workshops on Crystal Growth, ICVGE-10 ; Conference date: 26-07-1998 Through 31-07-1998",

year = "1999",

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doi = "10.1016/S0022-0248(98)01044-6",

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T1 - Growth of (1 1 1)-oriented PbTe thin films on vicinal Si(1 1 1) and on Si(1 0 0) using fluoride buffers

AU - Belenchuk, A.

AU - Shapoval, O.

AU - Kantser, V.

AU - Fedorov, A.

AU - Schunk, P.

AU - Schimmel, Th

AU - Dashevsky, Z.

N1 - Funding Information: The authors are thankful to Dr. V. Moshnyaga for helpful discussions. This research has been supported in part by INTAS project 96-0535.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - High-quality PbTe films have been grown on vicinal Si(1 1 1) using both stacked BaF2-CaF2 buffers and single BaF2 layers deposited directly on Si by the two-step growth method. Unlike on exactly oriented Si(1 1 1), the surface morphology of PbTe grown on vicinal Si(1 1 1) was undulated due to bunched steps on the BaF2 surface. The BaF2 buffer layers and the PbTe films grown on Si(1 0 0) consist of domains rotated by 90° and 180° around the normal to the surface, with the (1 1 1) BaF2 and the (1 1 1) PbTe planes parallel to the (1 0 0) Si plane. Although the PbTe films grown on Si(1 0 0) have domain structures, the mobility of carriers at 300 K is the same as in PbTe films grown on Si(1 1 1) and these heterostructures are capable of relieving the thermal mismatch strain.

AB - High-quality PbTe films have been grown on vicinal Si(1 1 1) using both stacked BaF2-CaF2 buffers and single BaF2 layers deposited directly on Si by the two-step growth method. Unlike on exactly oriented Si(1 1 1), the surface morphology of PbTe grown on vicinal Si(1 1 1) was undulated due to bunched steps on the BaF2 surface. The BaF2 buffer layers and the PbTe films grown on Si(1 0 0) consist of domains rotated by 90° and 180° around the normal to the surface, with the (1 1 1) BaF2 and the (1 1 1) PbTe planes parallel to the (1 0 0) Si plane. Although the PbTe films grown on Si(1 0 0) have domain structures, the mobility of carriers at 300 K is the same as in PbTe films grown on Si(1 1 1) and these heterostructures are capable of relieving the thermal mismatch strain.

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VL - 198-199

SP - 1216

EP - 1221

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - pt 2

T2 - Proceedings of the 1998 10th International Conference on Vapor Growth and Epitaxy and Specialist Workshops on Crystal Growth, ICVGE-10

Y2 - 26 July 1998 through 31 July 1998

ER -

Growth of (1 1 1)-oriented PbTe thin films on vicinal Si(1 1 1) and on Si(1 0 0) using fluoride buffers

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