Growth of (1 1 1)-oriented PbTe thin films on vicinal Si(1 1 1) and on Si(1 0 0) using fluoride buffers

A. Belenchuk, O. Shapoval, V. Kantser, A. Fedorov, P. Schunk, Th Schimmel, Z. Dashevsky

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations

Abstract

High-quality PbTe films have been grown on vicinal Si(1 1 1) using both stacked BaF2-CaF2 buffers and single BaF2 layers deposited directly on Si by the two-step growth method. Unlike on exactly oriented Si(1 1 1), the surface morphology of PbTe grown on vicinal Si(1 1 1) was undulated due to bunched steps on the BaF2 surface. The BaF2 buffer layers and the PbTe films grown on Si(1 0 0) consist of domains rotated by 90° and 180° around the normal to the surface, with the (1 1 1) BaF2 and the (1 1 1) PbTe planes parallel to the (1 0 0) Si plane. Although the PbTe films grown on Si(1 0 0) have domain structures, the mobility of carriers at 300 K is the same as in PbTe films grown on Si(1 1 1) and these heterostructures are capable of relieving the thermal mismatch strain.

Original languageEnglish
Pages (from-to)1216-1221
Number of pages6
JournalJournal of Crystal Growth
Volume198-199
Issue numberpt 2
DOIs
StatePublished - 1 Jan 1999
EventProceedings of the 1998 10th International Conference on Vapor Growth and Epitaxy and Specialist Workshops on Crystal Growth, ICVGE-10 - Jerusalem, Isr
Duration: 26 Jul 199831 Jul 1998

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