Growth of GaN on (0001) sapphire by MOCVD using a multilayer approach in a closed space showerhead reactor

J. T. Kobayashi, N. P. Kobayashi, P. D. Dapkus, X. Zhang, D. H. Rich

Research output: Contribution to journalConference articlepeer-review

Abstract

A multiple buffer layer and overgrowth layer strategy that results in the formation of featureless layers of high-quality GaN on sapphire and other substrates was developed from the optimization of GaN growth by metalorganic chemical vapor deposition (MOCVD) in a closed space showerhead reactor. The layers form as a result of the selective lateral growth and merging of uniform height three dimensional islands and subsequent two-dimensional growth.

Original languageEnglish
Pages (from-to)10
Number of pages1
JournalLEOS Summer Topical Meeting
StatePublished - 1 Jan 1997
Externally publishedYes
EventProceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can
Duration: 11 Aug 199715 Aug 1997

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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