Growth of GaN on (0001) sapphire by MOCVD using a multilayer approach in a closed space showerhead reactor

J. T. Kobayashi; N. P. Kobayashi; P. D. Dapkus; X. Zhang; D. H. Rich

Growth of GaN on (0001) sapphire by MOCVD using a multilayer approach in a closed space showerhead reactor

J. T. Kobayashi
, N. P. Kobayashi
, P. D. Dapkus
, X. Zhang
, D. H. Rich

Research output: Contribution to journal › Conference article › peer-review

Abstract

A multiple buffer layer and overgrowth layer strategy that results in the formation of featureless layers of high-quality GaN on sapphire and other substrates was developed from the optimization of GaN growth by metalorganic chemical vapor deposition (MOCVD) in a closed space showerhead reactor. The layers form as a result of the selective lateral growth and merging of uniform height three dimensional islands and subsequent two-dimensional growth.

Original language	English
Pages (from-to)	10
Number of pages	1
Journal	LEOS Summer Topical Meeting
State	Published - 1 Jan 1997
Externally published	Yes
Event	Proceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can Duration: 11 Aug 1997 → 15 Aug 1997

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

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title = "Growth of GaN on (0001) sapphire by MOCVD using a multilayer approach in a closed space showerhead reactor",

abstract = "A multiple buffer layer and overgrowth layer strategy that results in the formation of featureless layers of high-quality GaN on sapphire and other substrates was developed from the optimization of GaN growth by metalorganic chemical vapor deposition (MOCVD) in a closed space showerhead reactor. The layers form as a result of the selective lateral growth and merging of uniform height three dimensional islands and subsequent two-dimensional growth.",

author = "Kobayashi, \{J. T.\} and Kobayashi, \{N. P.\} and Dapkus, \{P. D.\} and X. Zhang and Rich, \{D. H.\}",

year = "1997",

month = jan,

day = "1",

language = "English",

pages = "10",

journal = "LEOS Summer Topical Meeting",

issn = "1099-4742",

publisher = "Institute of Electrical and Electronics Engineers",

note = "Proceedings of the 1997 LEOS Summer Topical Meeting ; Conference date: 11-08-1997 Through 15-08-1997",

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TY - JOUR

T1 - Growth of GaN on (0001) sapphire by MOCVD using a multilayer approach in a closed space showerhead reactor

AU - Kobayashi, J. T.

AU - Kobayashi, N. P.

AU - Dapkus, P. D.

AU - Zhang, X.

AU - Rich, D. H.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - A multiple buffer layer and overgrowth layer strategy that results in the formation of featureless layers of high-quality GaN on sapphire and other substrates was developed from the optimization of GaN growth by metalorganic chemical vapor deposition (MOCVD) in a closed space showerhead reactor. The layers form as a result of the selective lateral growth and merging of uniform height three dimensional islands and subsequent two-dimensional growth.

AB - A multiple buffer layer and overgrowth layer strategy that results in the formation of featureless layers of high-quality GaN on sapphire and other substrates was developed from the optimization of GaN growth by metalorganic chemical vapor deposition (MOCVD) in a closed space showerhead reactor. The layers form as a result of the selective lateral growth and merging of uniform height three dimensional islands and subsequent two-dimensional growth.

UR - https://www.scopus.com/pages/publications/0030690792

M3 - Conference article

AN - SCOPUS:0030690792

SN - 1099-4742

SP - 10

JO - LEOS Summer Topical Meeting

JF - LEOS Summer Topical Meeting

T2 - Proceedings of the 1997 LEOS Summer Topical Meeting

Y2 - 11 August 1997 through 15 August 1997

ER -

Growth of GaN on (0001) sapphire by MOCVD using a multilayer approach in a closed space showerhead reactor

Abstract

ASJC Scopus subject areas

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