Growth of PbTe films by magnetron sputtering

A. Jdanov; J. Pelleg; Z. Dashevsky; R. Shneck

Growth of PbTe films by magnetron sputtering

A. Jdanov, J. Pelleg, Z. Dashevsky, R. Shneck

Department of Materials Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Thin films of PbTe were deposited on Si(111) wafers and glass substrates at a constant power for different times and at a constant time at various power levels. In some cases substrate heating to a temperature of ∼673K was performed during sputtering. Structural analysis by X-ray diffraction (XRD) and high-resolution electron microscopy (HRTEM) were performed. The composition of the PbTe film was evaluated by Auger depth profile. At an appropriate combination of power and deposition time only (200) and its higher order peaks were observed in the PbTe film. It is expected that it is feasible to obtain epitaxial PbTe film by RF magnetron sputtering.

Original language	English
Pages (from-to)	295-300
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	691
State	Published - 1 Jan 2002
Event	Thermoelectric Materials 2001-Research and Applications - Boston, MA, United States Duration: 26 Nov 2001 → 29 Nov 2001

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{009805a638d84162a6f974965c8d1348,

title = "Growth of PbTe films by magnetron sputtering",

abstract = "Thin films of PbTe were deposited on Si(111) wafers and glass substrates at a constant power for different times and at a constant time at various power levels. In some cases substrate heating to a temperature of ∼673K was performed during sputtering. Structural analysis by X-ray diffraction (XRD) and high-resolution electron microscopy (HRTEM) were performed. The composition of the PbTe film was evaluated by Auger depth profile. At an appropriate combination of power and deposition time only (200) and its higher order peaks were observed in the PbTe film. It is expected that it is feasible to obtain epitaxial PbTe film by RF magnetron sputtering.",

author = "A. Jdanov and J. Pelleg and Z. Dashevsky and R. Shneck",

year = "2002",

month = jan,

day = "1",

language = "English",

volume = "691",

pages = "295--300",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Thermoelectric Materials 2001-Research and Applications ; Conference date: 26-11-2001 Through 29-11-2001",

}

TY - JOUR

T1 - Growth of PbTe films by magnetron sputtering

AU - Jdanov, A.

AU - Pelleg, J.

AU - Dashevsky, Z.

AU - Shneck, R.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Thin films of PbTe were deposited on Si(111) wafers and glass substrates at a constant power for different times and at a constant time at various power levels. In some cases substrate heating to a temperature of ∼673K was performed during sputtering. Structural analysis by X-ray diffraction (XRD) and high-resolution electron microscopy (HRTEM) were performed. The composition of the PbTe film was evaluated by Auger depth profile. At an appropriate combination of power and deposition time only (200) and its higher order peaks were observed in the PbTe film. It is expected that it is feasible to obtain epitaxial PbTe film by RF magnetron sputtering.

AB - Thin films of PbTe were deposited on Si(111) wafers and glass substrates at a constant power for different times and at a constant time at various power levels. In some cases substrate heating to a temperature of ∼673K was performed during sputtering. Structural analysis by X-ray diffraction (XRD) and high-resolution electron microscopy (HRTEM) were performed. The composition of the PbTe film was evaluated by Auger depth profile. At an appropriate combination of power and deposition time only (200) and its higher order peaks were observed in the PbTe film. It is expected that it is feasible to obtain epitaxial PbTe film by RF magnetron sputtering.

UR - http://www.scopus.com/inward/record.url?scp=0036352189&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036352189

SN - 0272-9172

VL - 691

SP - 295

EP - 300

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Thermoelectric Materials 2001-Research and Applications

Y2 - 26 November 2001 through 29 November 2001

ER -

Growth of PbTe films by magnetron sputtering

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this