Growth of PbTe films by magnetron sputtering

A. Jdanov, J. Pelleg, Z. Dashevsky, R. Shneck

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Thin films of PbTe were deposited on Si(111) wafers and glass substrates at a constant power for different times and at a constant time at various power levels. In some cases substrate heating to a temperature of ∼673K was performed during sputtering. Structural analysis by X-ray diffraction (XRD) and high-resolution electron microscopy (HRTEM) were performed. The composition of the PbTe film was evaluated by Auger depth profile. At an appropriate combination of power and deposition time only (200) and its higher order peaks were observed in the PbTe film. It is expected that it is feasible to obtain epitaxial PbTe film by RF magnetron sputtering.

Original languageEnglish
Pages (from-to)295-300
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume691
StatePublished - 1 Jan 2002
EventThermoelectric Materials 2001-Research and Applications - Boston, MA, United States
Duration: 26 Nov 200129 Nov 2001

ASJC Scopus subject areas

  • Materials Science (all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Growth of PbTe films by magnetron sputtering'. Together they form a unique fingerprint.

Cite this