Thin films of PbTe were deposited on Si(111) wafers and glass substrates at a constant power for different times and at a constant time at various power levels. In some cases substrate heating to a temperature of ∼673K was performed during sputtering. Structural analysis by X-ray diffraction (XRD) and high-resolution electron microscopy (HRTEM) were performed. The composition of the PbTe film was evaluated by Auger depth profile. At an appropriate combination of power and deposition time only (200) and its higher order peaks were observed in the PbTe film. It is expected that it is feasible to obtain epitaxial PbTe film by RF magnetron sputtering.
|Number of pages||6|
|Journal||Materials Research Society Symposium Proceedings|
|State||Published - 1 Jan 2002|
|Event||Thermoelectric Materials 2001-Research and Applications - Boston, MA, United States|
Duration: 26 Nov 2001 → 29 Nov 2001