Abstract
We demonstrate that single-crystal hexagonal GaN can be grown by metal-organic chemical vapor deposition on an aluminum oxide compound (AlOx) layer utilized as an intermediate layer between GaN and a Si(111) substrate. The surface morphology of GaN grown on the AlOx/Si(111) substrate is found to be very sensitive to both the GaN buffer-layer thickness and the AlOx thickness. Contact mode atomic force microscopy (C-AFM) observation indicates that the AlOx surface is composed of domain-like features with varying surface heights. A possible clue for a mechanism by which single crystal GaN grows on AlOx is discussed by comparing the domain-like surface features observed by C-AFM.
Original language | English |
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Pages (from-to) | 172-177 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 189-190 |
DOIs | |
State | Published - 15 Jun 1998 |
Externally published | Yes |
Keywords
- AFM
- Aluminum oxide
- CL
- GaN
- MOCVD
- XRD
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry