Growth of single crystal GaN on a Si substrate using oxidized AlAs as an intermediate layer

Nobuhiko P. Kobayashi, Junko T. Kobayashi, Won Jin Choi, P. Daniel Dapkus, Xingang Zhang, Daniel H. Rich

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

We demonstrate that single-crystal hexagonal GaN can be grown by metal-organic chemical vapor deposition on an aluminum oxide compound (AlOx) layer utilized as an intermediate layer between GaN and a Si(111) substrate. The surface morphology of GaN grown on the AlOx/Si(111) substrate is found to be very sensitive to both the GaN buffer-layer thickness and the AlOx thickness. Contact mode atomic force microscopy (C-AFM) observation indicates that the AlOx surface is composed of domain-like features with varying surface heights. A possible clue for a mechanism by which single crystal GaN grows on AlOx is discussed by comparing the domain-like surface features observed by C-AFM.

Original languageEnglish
Pages (from-to)172-177
Number of pages6
JournalJournal of Crystal Growth
Volume189-190
DOIs
StatePublished - 15 Jun 1998
Externally publishedYes

Keywords

  • AFM
  • Aluminum oxide
  • CL
  • GaN
  • MOCVD
  • XRD

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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