Growth of single crystal GaN on a Si substrate using oxidized AlAs as an intermediate layer

Keyphrases

• Single Crystal Growth 100%
• Aluminum Oxide 100%
• Si Substrate 100%
• Oxide Compounds 100%
• Atomic Force Microscopy 40%
• Single Crystal 40%
• Contact Mode 40%
• Si(111) Substrate 40%
• Surface Morphology 20%
• Microscopic Examination 20%
• Surface Height 20%
• Metal-organic Chemical Vapor Deposition (MOCVD) 20%
• Surface Features 20%
• Compound Layer 20%
• GaN Buffer 20%
• Hexagonal GaN 20%
• Buffer Layer Thickness 20%
• Compound Surface 20%

Engineering

• Aluminum Oxide 100%
• Si Substrate 100%
• Intermediate Layer 100%
• Atomic Force Microscopy 40%
• Contact Mode 40%
• Layer Thickness 20%
• Surface Morphology 20%
• Surface Height 20%
• Buffer Layer 20%
• Metal Organic Chemical Vapor Deposition 20%
• Compound Layer 20%
• Surface Feature 20%

Material Science

• Oxide Compound 100%
• Single Crystal 100%
• Aluminum Oxide 100%
• Surface Morphology 20%
• Buffer Layer 20%
• Metal-Organic Chemical Vapor Deposition 20%