Guided growth of horizontal GaN nanowires on quartz and their transfer to other substrates

Lior Goren-Ruck, David Tsivion, Mark Schvartzman, Ronit Popovitz-Biro, Ernesto Joselevich

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

The guided growth of horizontal nanowires has so far been demonstrated on a limited number of substrates. In most cases, the nanowires are covalently bonded to the substrate where they grow and cannot be transferred to other substrates. Here we demonstrate the guided growth of well-aligned horizontal GaN nanowires on quartz and their subsequent transfer to silicon wafers by selective etching of the quartz while maintaining their alignment. The guided growth was observed on different planes of quartz with varying degrees of alignment. We characterized the crystallographic orientations of the nanowires and proposed a new mechanism of "dynamic graphoepitaxy" for their guided growth on quartz. The transfer of the guided nanowires enabled the fabrication of back-gated field-effect transistors from aligned nanowire arrays on oxidized silicon wafers and the production of crossbar arrays. The guided growth of transferrable nanowires opens up the possibility of massively parallel integration of nanowires into functional systems on virtually any desired substrate.

Original languageEnglish
Pages (from-to)2838-2847
Number of pages10
JournalACS Nano
Volume8
Issue number3
DOIs
StatePublished - 25 Mar 2014
Externally publishedYes

Keywords

  • bottom-up
  • epitaxy
  • gallium nitride
  • nanowires
  • quartz
  • self-assembly
  • transfer

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy

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