Guided growth of millimeter-long horizontal nanowires with controlled orientations

David Tsivion, Mark Schvartzman, Ronit Popovitz-Biro, Palle Von Huth, Ernesto Joselevich

Research output: Contribution to journalArticlepeer-review

224 Scopus citations


The large-scale assembly of nanowires with controlled orientation on surfaces remains one challenge preventing their integration into practical devices. We report the vapor-liquid-solid growth of aligned, millimeter-long, horizontal GaN nanowires with controlled crystallographic orientations on different planes of sapphire. The growth directions, crystallographic orientation, and faceting of the nanowires vary with each surface orientation, as determined by their epitaxial relationship with the substrate, as well as by a graphoepitaxial effect that guides their growth along surface steps and grooves. Despite their interaction with the surface, these horizontally grown nanowires display few structural defects, exhibiting optical and electronic properties comparable to those of vertically grown nanowires. This paves the way to highly controlled nanowire structures with potential applications not available by other means.

Original languageEnglish
Pages (from-to)1003-1007
Number of pages5
Issue number6045
StatePublished - 19 Aug 2011
Externally publishedYes

ASJC Scopus subject areas

  • General


Dive into the research topics of 'Guided growth of millimeter-long horizontal nanowires with controlled orientations'. Together they form a unique fingerprint.

Cite this