Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density

Yasuhiro Oshima; Michael Shandalov; Yun Sun; Piero Pianetta; Paul C. McIntyre

doi:10.1063/1.3116624

Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density

Yasuhiro Oshima, Michael Shandalov, Yun Sun, Piero Pianetta, Paul C. McIntyre

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Abstract

The chemical state of Ge in HfO₂ / GeO_x N_y /Ge gate stacks and electrical property correlations are investigated to understand their capacitance scaling potential. We obtained gate stacks with low interface state density (D_it ∼3× 10¹¹ cm ^-2 eV^-1) and a small capacitance equivalent oxide thickness (CET) of ∼1.35 nm by nitridation of Ge (100) and atomic layer deposition of HfO₂. The nitrogen content of the GeO_x N_y affects both the crystalline structure of the overlying HfO ₂ and Ge diffusion into the HfO₂. Introduction of Ge impurity by forming gas anneal coincided with the formation of a higher- k HfO₂ phase, consistent with CET reduction.

Original language	English
Article number	183102
Journal	Applied Physics Letters
Volume	94
Issue number	18
DOIs	https://doi.org/10.1063/1.3116624
State	Published - 18 May 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The chemical state of Ge in HfO2 / GeOx Ny /Ge gate stacks and electrical property correlations are investigated to understand their capacitance scaling potential. We obtained gate stacks with low interface state density (Dit ∼3× 1011 cm -2 eV-1) and a small capacitance equivalent oxide thickness (CET) of ∼1.35 nm by nitridation of Ge (100) and atomic layer deposition of HfO2. The nitrogen content of the GeOx Ny affects both the crystalline structure of the overlying HfO 2 and Ge diffusion into the HfO2. Introduction of Ge impurity by forming gas anneal coincided with the formation of a higher- k HfO2 phase, consistent with CET reduction.",

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AU - Oshima, Yasuhiro

AU - Shandalov, Michael

AU - Sun, Yun

AU - Pianetta, Piero

AU - McIntyre, Paul C.

PY - 2009/5/18

Y1 - 2009/5/18

N2 - The chemical state of Ge in HfO2 / GeOx Ny /Ge gate stacks and electrical property correlations are investigated to understand their capacitance scaling potential. We obtained gate stacks with low interface state density (Dit ∼3× 1011 cm -2 eV-1) and a small capacitance equivalent oxide thickness (CET) of ∼1.35 nm by nitridation of Ge (100) and atomic layer deposition of HfO2. The nitrogen content of the GeOx Ny affects both the crystalline structure of the overlying HfO 2 and Ge diffusion into the HfO2. Introduction of Ge impurity by forming gas anneal coincided with the formation of a higher- k HfO2 phase, consistent with CET reduction.

AB - The chemical state of Ge in HfO2 / GeOx Ny /Ge gate stacks and electrical property correlations are investigated to understand their capacitance scaling potential. We obtained gate stacks with low interface state density (Dit ∼3× 1011 cm -2 eV-1) and a small capacitance equivalent oxide thickness (CET) of ∼1.35 nm by nitridation of Ge (100) and atomic layer deposition of HfO2. The nitrogen content of the GeOx Ny affects both the crystalline structure of the overlying HfO 2 and Ge diffusion into the HfO2. Introduction of Ge impurity by forming gas anneal coincided with the formation of a higher- k HfO2 phase, consistent with CET reduction.

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Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density

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