Heating of localized spins in a magnetic semiconductor in the paramagnetic state

M. I. Auslender; N. G. Bebenin

doi:10.1016/0375-9601(81)90721-0

Heating of localized spins in a magnetic semiconductor in the paramagnetic state

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Abstract

The energy balance equation for Heisenberg paramagnetic spins coupled with current carriers and phonons is analyzed. It is shown that a bottleneck situation may occur in which the effective temperatures of spins and carriers coincide. An unusual distortion of the current-voltage characteristic as an effect of this bottleneck regime is predicted.

Original language	English
Pages (from-to)	297-298
Number of pages	2
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	81
Issue number	5
DOIs	https://doi.org/10.1016/0375-9601(81)90721-0
State	Published - 26 Jan 1981
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1016/0375-9601(81)90721-0

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title = "Heating of localized spins in a magnetic semiconductor in the paramagnetic state",

abstract = "The energy balance equation for Heisenberg paramagnetic spins coupled with current carriers and phonons is analyzed. It is shown that a bottleneck situation may occur in which the effective temperatures of spins and carriers coincide. An unusual distortion of the current-voltage characteristic as an effect of this bottleneck regime is predicted.",

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year = "1981",

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T1 - Heating of localized spins in a magnetic semiconductor in the paramagnetic state

AU - Auslender, M. I.

AU - Bebenin, N. G.

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Y1 - 1981/1/26

N2 - The energy balance equation for Heisenberg paramagnetic spins coupled with current carriers and phonons is analyzed. It is shown that a bottleneck situation may occur in which the effective temperatures of spins and carriers coincide. An unusual distortion of the current-voltage characteristic as an effect of this bottleneck regime is predicted.

AB - The energy balance equation for Heisenberg paramagnetic spins coupled with current carriers and phonons is analyzed. It is shown that a bottleneck situation may occur in which the effective temperatures of spins and carriers coincide. An unusual distortion of the current-voltage characteristic as an effect of this bottleneck regime is predicted.

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DO - 10.1016/0375-9601(81)90721-0

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JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

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Heating of localized spins in a magnetic semiconductor in the paramagnetic state

Abstract

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