High frequency optical integrated circuit design and first iteration realisation in standard silicon CMOS integrated circuitry

L. W. Snyman; A. Bogalecki; L. M. Canning; M. Du Plessis; H. Aharoni

doi:10.1109/EDMO.2002.1174934

High frequency optical integrated circuit design and first iteration realisation in standard silicon CMOS integrated circuitry

L. W. Snyman, A. Bogalecki, L. M. Canning, M. Du Plessis, H. Aharoni

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

A prototype silicon CMOS optical integrated circuit (Si CMOS OEIC) was designed and simulated using standard 0.8 micron Bi-CMOS silicon integrated circuit technology. The circuit consisted of an integrated silicon light emitting source, an optical wave-guiding structure, two integrated optical detectors and two high-gain CMOS trans-impedance based analogue amplifiers. Simulations with MicroSim PSpice software predict a typical mean bandwidth capability of 185 MHz for the trans-impedance amplifier for detected photo-currents at the input of the amplifier in the range of 1 nA to 100 nA and driving a 10 kΩ load. First iteration waveguiding structures were realised in 1.2 micron CMOS technology for various source-waveguide-detector arrangements. Signal coupling ranging from 1 nA to 1 micron was detected at the detectors. The technology seems favourable for first-iteration implementations as diverse opto-electronic applications in silicon - CMOS integrated circuitry.

Original language	English
Title of host publication	10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002
Publisher	Institute of Electrical and Electronics Engineers
Pages	77-82
Number of pages	6
ISBN (Electronic)	0780375300
DOIs	https://doi.org/10.1109/EDMO.2002.1174934
State	Published - 1 Jan 2002
Externally published	Yes
Event	10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002 - Manchester, United Kingdom Duration: 18 Nov 2002 → 19 Nov 2002

Publication series

Name	IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications
Volume	2002-January

Conference

Conference	10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002
Country/Territory	United Kingdom
City	Manchester
Period	18/11/02 → 19/11/02

Keywords

CMOS technology
Circuit simulation
Frequency
Integrated circuit synthesis
Integrated circuit technology
Integrated optics
Optical amplifiers
Silicon
Stimulated emission
Virtual prototyping

ASJC Scopus subject areas

Engineering (all)

Access to Document

10.1109/EDMO.2002.1174934

Cite this

Snyman, L. W., Bogalecki, A., Canning, L. M., Du Plessis, M., & Aharoni, H. (2002). High frequency optical integrated circuit design and first iteration realisation in standard silicon CMOS integrated circuitry. In 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002 (pp. 77-82). [1174934] (IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications; Vol. 2002-January). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/EDMO.2002.1174934

Snyman, L. W. ; Bogalecki, A. ; Canning, L. M. et al. / High frequency optical integrated circuit design and first iteration realisation in standard silicon CMOS integrated circuitry. 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002. Institute of Electrical and Electronics Engineers, 2002. pp. 77-82 (IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications).

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title = "High frequency optical integrated circuit design and first iteration realisation in standard silicon CMOS integrated circuitry",

abstract = "A prototype silicon CMOS optical integrated circuit (Si CMOS OEIC) was designed and simulated using standard 0.8 micron Bi-CMOS silicon integrated circuit technology. The circuit consisted of an integrated silicon light emitting source, an optical wave-guiding structure, two integrated optical detectors and two high-gain CMOS trans-impedance based analogue amplifiers. Simulations with MicroSim PSpice software predict a typical mean bandwidth capability of 185 MHz for the trans-impedance amplifier for detected photo-currents at the input of the amplifier in the range of 1 nA to 100 nA and driving a 10 kΩ load. First iteration waveguiding structures were realised in 1.2 micron CMOS technology for various source-waveguide-detector arrangements. Signal coupling ranging from 1 nA to 1 micron was detected at the detectors. The technology seems favourable for first-iteration implementations as diverse opto-electronic applications in silicon - CMOS integrated circuitry.",

keywords = "CMOS technology, Circuit simulation, Frequency, Integrated circuit synthesis, Integrated circuit technology, Integrated optics, Optical amplifiers, Silicon, Stimulated emission, Virtual prototyping",

author = "Snyman, {L. W.} and A. Bogalecki and Canning, {L. M.} and {Du Plessis}, M. and H. Aharoni",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002 ; Conference date: 18-11-2002 Through 19-11-2002",

year = "2002",

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series = "IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications",

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Snyman, LW, Bogalecki, A, Canning, LM, Du Plessis, M & Aharoni, H 2002, High frequency optical integrated circuit design and first iteration realisation in standard silicon CMOS integrated circuitry. in 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002., 1174934, IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, vol. 2002-January, Institute of Electrical and Electronics Engineers, pp. 77-82, 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002, Manchester, United Kingdom, 18/11/02. https://doi.org/10.1109/EDMO.2002.1174934

High frequency optical integrated circuit design and first iteration realisation in standard silicon CMOS integrated circuitry. / Snyman, L. W.; Bogalecki, A.; Canning, L. M. et al.

10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002. Institute of Electrical and Electronics Engineers, 2002. p. 77-82 1174934 (IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - A prototype silicon CMOS optical integrated circuit (Si CMOS OEIC) was designed and simulated using standard 0.8 micron Bi-CMOS silicon integrated circuit technology. The circuit consisted of an integrated silicon light emitting source, an optical wave-guiding structure, two integrated optical detectors and two high-gain CMOS trans-impedance based analogue amplifiers. Simulations with MicroSim PSpice software predict a typical mean bandwidth capability of 185 MHz for the trans-impedance amplifier for detected photo-currents at the input of the amplifier in the range of 1 nA to 100 nA and driving a 10 kΩ load. First iteration waveguiding structures were realised in 1.2 micron CMOS technology for various source-waveguide-detector arrangements. Signal coupling ranging from 1 nA to 1 micron was detected at the detectors. The technology seems favourable for first-iteration implementations as diverse opto-electronic applications in silicon - CMOS integrated circuitry.

AB - A prototype silicon CMOS optical integrated circuit (Si CMOS OEIC) was designed and simulated using standard 0.8 micron Bi-CMOS silicon integrated circuit technology. The circuit consisted of an integrated silicon light emitting source, an optical wave-guiding structure, two integrated optical detectors and two high-gain CMOS trans-impedance based analogue amplifiers. Simulations with MicroSim PSpice software predict a typical mean bandwidth capability of 185 MHz for the trans-impedance amplifier for detected photo-currents at the input of the amplifier in the range of 1 nA to 100 nA and driving a 10 kΩ load. First iteration waveguiding structures were realised in 1.2 micron CMOS technology for various source-waveguide-detector arrangements. Signal coupling ranging from 1 nA to 1 micron was detected at the detectors. The technology seems favourable for first-iteration implementations as diverse opto-electronic applications in silicon - CMOS integrated circuitry.

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KW - Stimulated emission

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Snyman LW, Bogalecki A, Canning LM, Du Plessis M, Aharoni H. High frequency optical integrated circuit design and first iteration realisation in standard silicon CMOS integrated circuitry. In 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002. Institute of Electrical and Electronics Engineers. 2002. p. 77-82. 1174934. (IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications). doi: 10.1109/EDMO.2002.1174934

High frequency optical integrated circuit design and first iteration realisation in standard silicon CMOS integrated circuitry

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

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