High-frequency random telegraph voltage noise in high-Tc thin films

V. D. Ashkenazy, G. Jung, I. B. Khalfin, B. Ya Shapiro

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


The vortex mechanism, leading to very high-frequency random telegraph voltage noise signals switching with MHz frequencies, is discussed. The mechanism assumes that vortices do not flow freely across dc-current-biased superconducting films but undergo subsequent processes of trapping and releasing from pinning centers. Random transitions of vortices between pinned and flow states result in the appearance of a Lorentzian component in a fluctuating-voltage power spectrum. It is shown that fluctuations of randomly distributed Abrikosov vortex density, rigidly moving across the strip, contribute an oscillating component to the noise spectrum. The distance between oscillating peaks corresponds to the time of flight of vortices across the strip.

Original languageEnglish
Pages (from-to)13679-13683
Number of pages5
JournalPhysical Review B
Issue number18
StatePublished - 1 Jan 1994

ASJC Scopus subject areas

  • Condensed Matter Physics


Dive into the research topics of 'High-frequency random telegraph voltage noise in high-Tc thin films'. Together they form a unique fingerprint.

Cite this