High performance InGaAs/GaAs quantum well infrared photodetectors

S. D. Gunapala; K. M.S.V. Bandara; B. F. Levine; G. Sarusi; J. S. Park; T. L. Lin; W. T. Pike; J. K. Liu

doi:10.1063/1.111232

High performance InGaAs/GaAs quantum well infrared photodetectors

S. D. Gunapala, K. M.S.V. Bandara, B. F. Levine, G. Sarusi, J. S. Park, T. L. Lin, W. T. Pike, J. K. Liu

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We have measured the optical and transport properties of In _0.2Ga_0.8As/GaAs quantum well infrared photodetectors based on bound-to-bound, bound-to-quasibound, and bound-to-continuum intersubband transitions. Excellent hot electron transport and high detectivity D*=1.8×10¹⁰ cmHz/W (at λ_p=16.7 μm) were achieved at temperature T=40 K.

Original language	English
Pages (from-to)	3431-3433
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	25
DOIs	https://doi.org/10.1063/1.111232
State	Published - 1 Dec 1994
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.111232

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@article{7009ca38f91648b6a6412b5c9ef4565a,

title = "High performance InGaAs/GaAs quantum well infrared photodetectors",

abstract = "We have measured the optical and transport properties of In 0.2Ga0.8As/GaAs quantum well infrared photodetectors based on bound-to-bound, bound-to-quasibound, and bound-to-continuum intersubband transitions. Excellent hot electron transport and high detectivity D*=1.8×1010 cmHz/W (at λp=16.7 μm) were achieved at temperature T=40 K.",

author = "Gunapala, {S. D.} and Bandara, {K. M.S.V.} and Levine, {B. F.} and G. Sarusi and Park, {J. S.} and Lin, {T. L.} and Pike, {W. T.} and Liu, {J. K.}",

year = "1994",

month = dec,

day = "1",

doi = "10.1063/1.111232",

language = "English",

volume = "64",

pages = "3431--3433",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - High performance InGaAs/GaAs quantum well infrared photodetectors

AU - Gunapala, S. D.

AU - Bandara, K. M.S.V.

AU - Levine, B. F.

AU - Sarusi, G.

AU - Park, J. S.

AU - Lin, T. L.

AU - Pike, W. T.

AU - Liu, J. K.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We have measured the optical and transport properties of In 0.2Ga0.8As/GaAs quantum well infrared photodetectors based on bound-to-bound, bound-to-quasibound, and bound-to-continuum intersubband transitions. Excellent hot electron transport and high detectivity D*=1.8×1010 cmHz/W (at λp=16.7 μm) were achieved at temperature T=40 K.

AB - We have measured the optical and transport properties of In 0.2Ga0.8As/GaAs quantum well infrared photodetectors based on bound-to-bound, bound-to-quasibound, and bound-to-continuum intersubband transitions. Excellent hot electron transport and high detectivity D*=1.8×1010 cmHz/W (at λp=16.7 μm) were achieved at temperature T=40 K.

UR - http://www.scopus.com/inward/record.url?scp=0028443292&partnerID=8YFLogxK

U2 - 10.1063/1.111232

DO - 10.1063/1.111232

M3 - Article

AN - SCOPUS:0028443292

SN - 0003-6951

VL - 64

SP - 3431

EP - 3433

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

High performance InGaAs/GaAs quantum well infrared photodetectors

Abstract

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