High performance n-type PbTe-based materials for thermoelectric applications

Y. Gelbstein; Z. Dashevsky; M. P. Dariel

doi:10.1016/j.physb.2005.03.022

High performance n-type PbTe-based materials for thermoelectric applications

Y. Gelbstein, Z. Dashevsky, M. P. Dariel

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

255 Scopus citations

Abstract

Lead telluride-based compounds are known for their favorable thermoelectric properties in the 50-600 °C temperature range. The transport properties of homogeneous, cold-compacted and sintered PbI₂-doped PbTe samples were measured and compared to those of cast samples with similar dopant concentrations. Such a comparison is mandatory in order to determine the potential of graded samples, prepared by powder metallurgy, for thermoelectric applications. The present work focuses on improving the thermoelectric efficiency of PbTe-based materials by functional grading and by taking advantage of the specific features of indium as dopant element. The potential for achieving high thermoelectric efficiency in In-doped n-type PbTe-based thermoelectric compounds is described, and is compared to that of PbI ₂-doped PbTe. Design, synthesis and characterization procedures are reported for fabricating In- and PbI₂-doped PbTe compounds with desired composition profiles.

Original language	English
Pages (from-to)	196-205
Number of pages	10
Journal	Physica B: Condensed Matter
Volume	363
Issue number	1-4
DOIs	https://doi.org/10.1016/j.physb.2005.03.022
State	Published - 15 Jun 2005

Keywords

Figure of merit
Lead telluride semiconductor
Thermoelectrics
Transport properties

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.physb.2005.03.022

Cite this

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title = "High performance n-type PbTe-based materials for thermoelectric applications",

abstract = "Lead telluride-based compounds are known for their favorable thermoelectric properties in the 50-600 °C temperature range. The transport properties of homogeneous, cold-compacted and sintered PbI2-doped PbTe samples were measured and compared to those of cast samples with similar dopant concentrations. Such a comparison is mandatory in order to determine the potential of graded samples, prepared by powder metallurgy, for thermoelectric applications. The present work focuses on improving the thermoelectric efficiency of PbTe-based materials by functional grading and by taking advantage of the specific features of indium as dopant element. The potential for achieving high thermoelectric efficiency in In-doped n-type PbTe-based thermoelectric compounds is described, and is compared to that of PbI 2-doped PbTe. Design, synthesis and characterization procedures are reported for fabricating In- and PbI2-doped PbTe compounds with desired composition profiles.",

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T1 - High performance n-type PbTe-based materials for thermoelectric applications

AU - Gelbstein, Y.

AU - Dashevsky, Z.

AU - Dariel, M. P.

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N2 - Lead telluride-based compounds are known for their favorable thermoelectric properties in the 50-600 °C temperature range. The transport properties of homogeneous, cold-compacted and sintered PbI2-doped PbTe samples were measured and compared to those of cast samples with similar dopant concentrations. Such a comparison is mandatory in order to determine the potential of graded samples, prepared by powder metallurgy, for thermoelectric applications. The present work focuses on improving the thermoelectric efficiency of PbTe-based materials by functional grading and by taking advantage of the specific features of indium as dopant element. The potential for achieving high thermoelectric efficiency in In-doped n-type PbTe-based thermoelectric compounds is described, and is compared to that of PbI 2-doped PbTe. Design, synthesis and characterization procedures are reported for fabricating In- and PbI2-doped PbTe compounds with desired composition profiles.

AB - Lead telluride-based compounds are known for their favorable thermoelectric properties in the 50-600 °C temperature range. The transport properties of homogeneous, cold-compacted and sintered PbI2-doped PbTe samples were measured and compared to those of cast samples with similar dopant concentrations. Such a comparison is mandatory in order to determine the potential of graded samples, prepared by powder metallurgy, for thermoelectric applications. The present work focuses on improving the thermoelectric efficiency of PbTe-based materials by functional grading and by taking advantage of the specific features of indium as dopant element. The potential for achieving high thermoelectric efficiency in In-doped n-type PbTe-based thermoelectric compounds is described, and is compared to that of PbI 2-doped PbTe. Design, synthesis and characterization procedures are reported for fabricating In- and PbI2-doped PbTe compounds with desired composition profiles.

KW - Figure of merit

KW - Lead telluride semiconductor

KW - Thermoelectrics

KW - Transport properties

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High performance n-type PbTe-based materials for thermoelectric applications

Abstract

Keywords

ASJC Scopus subject areas

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