Abstract
Lead telluride-based compounds are known for their favorable thermoelectric properties in the 50-600 °C temperature range. The transport properties of homogeneous, cold-compacted and sintered PbI2-doped PbTe samples were measured and compared to those of cast samples with similar dopant concentrations. Such a comparison is mandatory in order to determine the potential of graded samples, prepared by powder metallurgy, for thermoelectric applications. The present work focuses on improving the thermoelectric efficiency of PbTe-based materials by functional grading and by taking advantage of the specific features of indium as dopant element. The potential for achieving high thermoelectric efficiency in In-doped n-type PbTe-based thermoelectric compounds is described, and is compared to that of PbI 2-doped PbTe. Design, synthesis and characterization procedures are reported for fabricating In- and PbI2-doped PbTe compounds with desired composition profiles.
Original language | English |
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Pages (from-to) | 196-205 |
Number of pages | 10 |
Journal | Physica B: Condensed Matter |
Volume | 363 |
Issue number | 1-4 |
DOIs | |
State | Published - 15 Jun 2005 |
Keywords
- Figure of merit
- Lead telluride semiconductor
- Thermoelectrics
- Transport properties
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering