High performance n-type PbTe-based materials for thermoelectric applications

Y. Gelbstein, Z. Dashevsky, M. P. Dariel

Research output: Contribution to journalArticlepeer-review

242 Scopus citations

Abstract

Lead telluride-based compounds are known for their favorable thermoelectric properties in the 50-600 °C temperature range. The transport properties of homogeneous, cold-compacted and sintered PbI2-doped PbTe samples were measured and compared to those of cast samples with similar dopant concentrations. Such a comparison is mandatory in order to determine the potential of graded samples, prepared by powder metallurgy, for thermoelectric applications. The present work focuses on improving the thermoelectric efficiency of PbTe-based materials by functional grading and by taking advantage of the specific features of indium as dopant element. The potential for achieving high thermoelectric efficiency in In-doped n-type PbTe-based thermoelectric compounds is described, and is compared to that of PbI 2-doped PbTe. Design, synthesis and characterization procedures are reported for fabricating In- and PbI2-doped PbTe compounds with desired composition profiles.

Original languageEnglish
Pages (from-to)196-205
Number of pages10
JournalPhysica B: Condensed Matter
Volume363
Issue number1-4
DOIs
StatePublished - 15 Jun 2005

Keywords

  • Figure of merit
  • Lead telluride semiconductor
  • Thermoelectrics
  • Transport properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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