High temperature electrical conduction in nanoscale hafnia films under varying oxygen partial pressure

Changhyun Ko; Michael Shandalov; Paul C. McIntyre; Shriram Ramanathan

doi:10.1063/1.3482940

High temperature electrical conduction in nanoscale hafnia films under varying oxygen partial pressure

Changhyun Ko, Michael Shandalov, Paul C. McIntyre, Shriram Ramanathan

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11 Scopus citations

Abstract

Point defect equilibration in nanocrystalline hafnium oxide thin films in the monoclinic (m-HfO₂) phase was studied by electrochemical measurements performed under varying temperature and oxygen partial pressure (P O₂) on films of 35-63 nm thickness on single crystal MgO and Al ₂ O₃ substrates. The conductance varied as (P O ₂) ⁿ, where n is the in the range ∼+1/11 to ∼+1/14, at high P O₂. The increasing conductance with P O ₂ suggests that the electronic conduction in the HfO₂ films is p-type and oxygen interstitials or hafnium vacancies, rather than oxygen vacancies, could be dominant charged point defects in nanocrystalline, undoped m-HfO₂ films.

Original language	English
Article number	082102
Journal	Applied Physics Letters
Volume	97
Issue number	8
DOIs	https://doi.org/10.1063/1.3482940
State	Published - 23 Aug 2010
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High temperature electrical conduction in nanoscale hafnia films under varying oxygen partial pressure",

abstract = "Point defect equilibration in nanocrystalline hafnium oxide thin films in the monoclinic (m-HfO2) phase was studied by electrochemical measurements performed under varying temperature and oxygen partial pressure (P O2) on films of 35-63 nm thickness on single crystal MgO and Al 2 O3 substrates. The conductance varied as (P O 2) n, where n is the in the range ∼+1/11 to ∼+1/14, at high P O2. The increasing conductance with P O 2 suggests that the electronic conduction in the HfO2 films is p-type and oxygen interstitials or hafnium vacancies, rather than oxygen vacancies, could be dominant charged point defects in nanocrystalline, undoped m-HfO2 films.",

author = "Changhyun Ko and Michael Shandalov and McIntyre, \{Paul C.\} and Shriram Ramanathan",

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T1 - High temperature electrical conduction in nanoscale hafnia films under varying oxygen partial pressure

AU - Ko, Changhyun

AU - Shandalov, Michael

AU - McIntyre, Paul C.

AU - Ramanathan, Shriram

PY - 2010/8/23

Y1 - 2010/8/23

N2 - Point defect equilibration in nanocrystalline hafnium oxide thin films in the monoclinic (m-HfO2) phase was studied by electrochemical measurements performed under varying temperature and oxygen partial pressure (P O2) on films of 35-63 nm thickness on single crystal MgO and Al 2 O3 substrates. The conductance varied as (P O 2) n, where n is the in the range ∼+1/11 to ∼+1/14, at high P O2. The increasing conductance with P O 2 suggests that the electronic conduction in the HfO2 films is p-type and oxygen interstitials or hafnium vacancies, rather than oxygen vacancies, could be dominant charged point defects in nanocrystalline, undoped m-HfO2 films.

AB - Point defect equilibration in nanocrystalline hafnium oxide thin films in the monoclinic (m-HfO2) phase was studied by electrochemical measurements performed under varying temperature and oxygen partial pressure (P O2) on films of 35-63 nm thickness on single crystal MgO and Al 2 O3 substrates. The conductance varied as (P O 2) n, where n is the in the range ∼+1/11 to ∼+1/14, at high P O2. The increasing conductance with P O 2 suggests that the electronic conduction in the HfO2 films is p-type and oxygen interstitials or hafnium vacancies, rather than oxygen vacancies, could be dominant charged point defects in nanocrystalline, undoped m-HfO2 films.

UR - https://www.scopus.com/pages/publications/77956213417

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DO - 10.1063/1.3482940

M3 - Article

AN - SCOPUS:77956213417

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082102

ER -

High temperature electrical conduction in nanoscale hafnia films under varying oxygen partial pressure

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