High-temperature PbTe diodes

Z. Dashevsky, V. Kasiyan, E. Mogilko, A. V. Butenko, R. Kahatabi, S. Genikov, V. Sandomirsky, Y. Schlesinger

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


We describe the preparation of high-temperature PbTe diodes. Satisfactory rectification was observed up to 180-200 K. Two types of diodes, based on a p-PbTe single crystal, were prepared: (1) by In ion-implantation, and (2) by thermodiffusion of In. Measurements were carried-out from ~ 10 K to ~ 200 K. The ion-implanted diodes exhibit a satisfactorily low saturation current up to a reverse bias of ~ 400 mV, and the thermally diffused junctions up to ~ 1 V. The junctions are linearly graded. The current-voltage characteristics have been fitted using the Shockley model. Photosensor parameters: zero-bias-resistance × area product, the R0C0-time constant and the detectivity D* are presented.

Original languageEnglish
Pages (from-to)7065-7069
Number of pages5
JournalThin Solid Films
Issue number20
StatePublished - 30 Aug 2008


  • Detectivity
  • PbTe
  • Volt-current characteristics
  • Volt-farad characteristics
  • p-n-junction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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