High-temperature PbTe diodes

Z. Dashevsky; V. Kasiyan; E. Mogilko; A. V. Butenko; R. Kahatabi; S. Genikov; V. Sandomirsky; Y. Schlesinger

doi:10.1016/j.tsf.2007.12.058

High-temperature PbTe diodes

Z. Dashevsky, V. Kasiyan, E. Mogilko, A. V. Butenko, R. Kahatabi, S. Genikov, V. Sandomirsky, Y. Schlesinger

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We describe the preparation of high-temperature PbTe diodes. Satisfactory rectification was observed up to 180-200 K. Two types of diodes, based on a p-PbTe single crystal, were prepared: (1) by In ion-implantation, and (2) by thermodiffusion of In. Measurements were carried-out from ~ 10 K to ~ 200 K. The ion-implanted diodes exhibit a satisfactorily low saturation current up to a reverse bias of ~ 400 mV, and the thermally diffused junctions up to ~ 1 V. The junctions are linearly graded. The current-voltage characteristics have been fitted using the Shockley model. Photosensor parameters: zero-bias-resistance × area product, the R₀C₀-time constant and the detectivity D^* are presented.

Original language	English
Pages (from-to)	7065-7069
Number of pages	5
Journal	Thin Solid Films
Volume	516
Issue number	20
DOIs	https://doi.org/10.1016/j.tsf.2007.12.058
State	Published - 30 Aug 2008

Keywords

Detectivity
PbTe
Volt-current characteristics
Volt-farad characteristics
p-n-junction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2007.12.058

Cite this

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title = "High-temperature PbTe diodes",

abstract = "We describe the preparation of high-temperature PbTe diodes. Satisfactory rectification was observed up to 180-200 K. Two types of diodes, based on a p-PbTe single crystal, were prepared: (1) by In ion-implantation, and (2) by thermodiffusion of In. Measurements were carried-out from ~ 10 K to ~ 200 K. The ion-implanted diodes exhibit a satisfactorily low saturation current up to a reverse bias of ~ 400 mV, and the thermally diffused junctions up to ~ 1 V. The junctions are linearly graded. The current-voltage characteristics have been fitted using the Shockley model. Photosensor parameters: zero-bias-resistance × area product, the R0C0-time constant and the detectivity D* are presented.",

keywords = "Detectivity, PbTe, Volt-current characteristics, Volt-farad characteristics, p-n-junction",

author = "Z. Dashevsky and V. Kasiyan and E. Mogilko and Butenko, {A. V.} and R. Kahatabi and S. Genikov and V. Sandomirsky and Y. Schlesinger",

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doi = "10.1016/j.tsf.2007.12.058",

language = "English",

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T1 - High-temperature PbTe diodes

AU - Dashevsky, Z.

AU - Kasiyan, V.

AU - Mogilko, E.

AU - Butenko, A. V.

AU - Kahatabi, R.

AU - Genikov, S.

AU - Sandomirsky, V.

AU - Schlesinger, Y.

PY - 2008/8/30

Y1 - 2008/8/30

N2 - We describe the preparation of high-temperature PbTe diodes. Satisfactory rectification was observed up to 180-200 K. Two types of diodes, based on a p-PbTe single crystal, were prepared: (1) by In ion-implantation, and (2) by thermodiffusion of In. Measurements were carried-out from ~ 10 K to ~ 200 K. The ion-implanted diodes exhibit a satisfactorily low saturation current up to a reverse bias of ~ 400 mV, and the thermally diffused junctions up to ~ 1 V. The junctions are linearly graded. The current-voltage characteristics have been fitted using the Shockley model. Photosensor parameters: zero-bias-resistance × area product, the R0C0-time constant and the detectivity D* are presented.

AB - We describe the preparation of high-temperature PbTe diodes. Satisfactory rectification was observed up to 180-200 K. Two types of diodes, based on a p-PbTe single crystal, were prepared: (1) by In ion-implantation, and (2) by thermodiffusion of In. Measurements were carried-out from ~ 10 K to ~ 200 K. The ion-implanted diodes exhibit a satisfactorily low saturation current up to a reverse bias of ~ 400 mV, and the thermally diffused junctions up to ~ 1 V. The junctions are linearly graded. The current-voltage characteristics have been fitted using the Shockley model. Photosensor parameters: zero-bias-resistance × area product, the R0C0-time constant and the detectivity D* are presented.

KW - Detectivity

KW - PbTe

KW - Volt-current characteristics

KW - Volt-farad characteristics

KW - p-n-junction

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DO - 10.1016/j.tsf.2007.12.058

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SN - 0040-6090

VL - 516

SP - 7065

EP - 7069

JO - Thin Solid Films

JF - Thin Solid Films

IS - 20

ER -

High-temperature PbTe diodes

Abstract

Keywords

ASJC Scopus subject areas

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