TY - JOUR
T1 - High thermoelectric performance of p-type half-Heusler (Hf,Ti)Co(Sb,Sn) solid solutions fabricated by mechanical alloying
AU - Ioannou, Ioanna
AU - Ioannou, Panagiotis S.
AU - Delimitis, Andreas
AU - Gelbstein, Yaniv
AU - Giapintzakis, Ioannis (John)
AU - Kyratsi, Theodora
N1 - Publisher Copyright:
© 2020 Elsevier B.V.
PY - 2021/3/25
Y1 - 2021/3/25
N2 - Mechanical alloying synthesis was applied on the thermoelectric half-Heusler materials in order to explore the potential of such scalable synthesis method in this family of compounds. (Hf,Ti)Co(Sb,Sn) solid solutions were prepared by mechanical alloying followed by hot pressing and their thermoelectric properties were studied in the temperature range of 300–980 K. After successful synthesis, two different methods were applied to enhance the thermoelectric performance of p-type (Hf,Ti)Co(Sb,Sn) materials: (a) adjustment of the Ti/Hf ratio and (b) fine tuning of carrier concentration by the substitution of Sb with Sn. The isoelectronic substitution of Ti with Hf led to an important reduction in the lattice thermal conductivity and a high ZT of 0.84 at 980 K for Hf0.6Ti0.4CoSb0.8Sn0.2. The effect of charge carrier concentration was investigated by preparing Hf0.6Ti0.4CoSb1−ySny (0.15, 0.17, 0.20, 0.23, 0.25) compounds, using different mechanical alloying durations. The Hf0.6Ti0.4CoSb0.83Sn0.17 composition, prepared by 4 h ball-milling, reached an impressive ZT ~1.1 at 973 K.
AB - Mechanical alloying synthesis was applied on the thermoelectric half-Heusler materials in order to explore the potential of such scalable synthesis method in this family of compounds. (Hf,Ti)Co(Sb,Sn) solid solutions were prepared by mechanical alloying followed by hot pressing and their thermoelectric properties were studied in the temperature range of 300–980 K. After successful synthesis, two different methods were applied to enhance the thermoelectric performance of p-type (Hf,Ti)Co(Sb,Sn) materials: (a) adjustment of the Ti/Hf ratio and (b) fine tuning of carrier concentration by the substitution of Sb with Sn. The isoelectronic substitution of Ti with Hf led to an important reduction in the lattice thermal conductivity and a high ZT of 0.84 at 980 K for Hf0.6Ti0.4CoSb0.8Sn0.2. The effect of charge carrier concentration was investigated by preparing Hf0.6Ti0.4CoSb1−ySny (0.15, 0.17, 0.20, 0.23, 0.25) compounds, using different mechanical alloying durations. The Hf0.6Ti0.4CoSb0.83Sn0.17 composition, prepared by 4 h ball-milling, reached an impressive ZT ~1.1 at 973 K.
KW - Ball milling
KW - Half-Heusler
KW - Hot-press sintering
KW - Mechanical alloying
KW - Thermoelectrics
UR - http://www.scopus.com/inward/record.url?scp=85098064337&partnerID=8YFLogxK
U2 - 10.1016/j.jallcom.2020.158330
DO - 10.1016/j.jallcom.2020.158330
M3 - Article
AN - SCOPUS:85098064337
SN - 0925-8388
VL - 858
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
M1 - 158330
ER -