High-yield synthesis of silicon carbide nanowires by solar and lamp ablation

Hai Bo Lu; Benjamin C.Y. Chan; Xiaolin Wang; Hui Tong Chua; Colin L. Raston; Ana Albu-Yaron; Moshe Levy; Ronit Popowitz-Biro; Reshef Tenne; Daniel Feuermann; Jeffrey M. Gordon

doi:10.1088/0957-4484/24/33/335603

High-yield synthesis of silicon carbide nanowires by solar and lamp ablation

Hai Bo Lu, Benjamin C.Y. Chan, Xiaolin Wang, Hui Tong Chua, Colin L. Raston, Ana Albu-Yaron, Moshe Levy, Ronit Popowitz-Biro, Reshef Tenne, Daniel Feuermann, Jeffrey M. Gordon

The Swiss Institute for Dryland Environmental and Energy Research

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We report a reasonably high yield (∼50%) synthesis of silicon carbide (SiC) nanowires from silicon oxides and carbon in vacuum, by novel solar and lamp photothermal ablation methods that obviate the need for catalysis, and allow relatively short reaction times (∼10 min) in a nominally one-step process that does not involve toxic reagents. The one-dimensional core/shell β-SiC/SiO_x nanostructures - characterized by SEM, TEM, HRTEM, SAED, XRD and EDS - are typically several microns long, with core and outer diameters of about 10 and 30 nm, respectively. HRTEM revealed additional distinctive nanoscale structures that also shed light on the formation pathways.

Original language	English
Article number	335603
Journal	Nanotechnology
Volume	24
Issue number	33
DOIs	https://doi.org/10.1088/0957-4484/24/33/335603
State	Published - 23 Aug 2013

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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@article{04e1aacb37ad434db51174846c8e2133,

title = "High-yield synthesis of silicon carbide nanowires by solar and lamp ablation",

abstract = "We report a reasonably high yield (∼50%) synthesis of silicon carbide (SiC) nanowires from silicon oxides and carbon in vacuum, by novel solar and lamp photothermal ablation methods that obviate the need for catalysis, and allow relatively short reaction times (∼10 min) in a nominally one-step process that does not involve toxic reagents. The one-dimensional core/shell β-SiC/SiOx nanostructures - characterized by SEM, TEM, HRTEM, SAED, XRD and EDS - are typically several microns long, with core and outer diameters of about 10 and 30 nm, respectively. HRTEM revealed additional distinctive nanoscale structures that also shed light on the formation pathways.",

author = "Lu, {Hai Bo} and Chan, {Benjamin C.Y.} and Xiaolin Wang and Chua, {Hui Tong} and Raston, {Colin L.} and Ana Albu-Yaron and Moshe Levy and Ronit Popowitz-Biro and Reshef Tenne and Daniel Feuermann and Gordon, {Jeffrey M.}",

year = "2013",

month = aug,

day = "23",

doi = "10.1088/0957-4484/24/33/335603",

language = "English",

volume = "24",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "33",

}

TY - JOUR

T1 - High-yield synthesis of silicon carbide nanowires by solar and lamp ablation

AU - Lu, Hai Bo

AU - Chan, Benjamin C.Y.

AU - Wang, Xiaolin

AU - Chua, Hui Tong

AU - Raston, Colin L.

AU - Albu-Yaron, Ana

AU - Levy, Moshe

AU - Popowitz-Biro, Ronit

AU - Tenne, Reshef

AU - Feuermann, Daniel

AU - Gordon, Jeffrey M.

PY - 2013/8/23

Y1 - 2013/8/23

N2 - We report a reasonably high yield (∼50%) synthesis of silicon carbide (SiC) nanowires from silicon oxides and carbon in vacuum, by novel solar and lamp photothermal ablation methods that obviate the need for catalysis, and allow relatively short reaction times (∼10 min) in a nominally one-step process that does not involve toxic reagents. The one-dimensional core/shell β-SiC/SiOx nanostructures - characterized by SEM, TEM, HRTEM, SAED, XRD and EDS - are typically several microns long, with core and outer diameters of about 10 and 30 nm, respectively. HRTEM revealed additional distinctive nanoscale structures that also shed light on the formation pathways.

AB - We report a reasonably high yield (∼50%) synthesis of silicon carbide (SiC) nanowires from silicon oxides and carbon in vacuum, by novel solar and lamp photothermal ablation methods that obviate the need for catalysis, and allow relatively short reaction times (∼10 min) in a nominally one-step process that does not involve toxic reagents. The one-dimensional core/shell β-SiC/SiOx nanostructures - characterized by SEM, TEM, HRTEM, SAED, XRD and EDS - are typically several microns long, with core and outer diameters of about 10 and 30 nm, respectively. HRTEM revealed additional distinctive nanoscale structures that also shed light on the formation pathways.

UR - http://www.scopus.com/inward/record.url?scp=84881162932&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/24/33/335603

DO - 10.1088/0957-4484/24/33/335603

M3 - Article

AN - SCOPUS:84881162932

SN - 0957-4484

VL - 24

JO - Nanotechnology

JF - Nanotechnology

IS - 33

M1 - 335603

ER -

High-yield synthesis of silicon carbide nanowires by solar and lamp ablation

Abstract

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