High-yield synthesis of silicon carbide nanowires by solar and lamp ablation

Hai Bo Lu, Benjamin C.Y. Chan, Xiaolin Wang, Hui Tong Chua, Colin L. Raston, Ana Albu-Yaron, Moshe Levy, Ronit Popowitz-Biro, Reshef Tenne, Daniel Feuermann, Jeffrey M. Gordon

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


We report a reasonably high yield (∼50%) synthesis of silicon carbide (SiC) nanowires from silicon oxides and carbon in vacuum, by novel solar and lamp photothermal ablation methods that obviate the need for catalysis, and allow relatively short reaction times (∼10 min) in a nominally one-step process that does not involve toxic reagents. The one-dimensional core/shell β-SiC/SiOx nanostructures - characterized by SEM, TEM, HRTEM, SAED, XRD and EDS - are typically several microns long, with core and outer diameters of about 10 and 30 nm, respectively. HRTEM revealed additional distinctive nanoscale structures that also shed light on the formation pathways.

Original languageEnglish
Article number335603
Issue number33
StatePublished - 23 Aug 2013

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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