Higher efficiency silicon CMOS light emitting devices (450nm-750nm) using current density and carrier injection techniques

Lukas W. Snyman, Monuko Du Plessis, Herzl Aharoni

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


In this paper we report on the dependency of quantum efficiency of an avalanching light emitting junction on current density and on the injection current from an adjacent lying forward biased junction. In particular, we report on the interpretation of results and modelling of the physical processes responsible for the light emission. The phenomenon was observed in a three terminal silicon bipolar junction CMOS light emitting device (Si BJ CMOS LED). Our observations show that the overall quantum efficiency and light emission from these type of devices can be improved to the 10 -3 regime. The optical emissions is about four orders higher than the low frequency detectivity for silicon CMOS detectors of comparable dimension. The three terminal device also enable modulation of the light emission by a third terminal contact. The device has the potential of being fully integratable with standard CMOS integrated circuitry with no adaptation to the CMOS design and processing procedures.

Original languageEnglish
Article number08
Pages (from-to)59-72
Number of pages14
JournalProgress in Biomedical Optics and Imaging - Proceedings of SPIE
StatePublished - 21 Jul 2005
EventOptoelectronic Integration on Silicon II - San Jose, CA, United States
Duration: 25 Jan 200526 Jan 2005


  • CMOS Technology
  • Electroluminescence
  • LED's
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Biomaterials
  • Radiology Nuclear Medicine and imaging


Dive into the research topics of 'Higher efficiency silicon CMOS light emitting devices (450nm-750nm) using current density and carrier injection techniques'. Together they form a unique fingerprint.

Cite this