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Higher-order breakdown in epitaxial P
+
N/N
+
junctions
H. Aharoni
Department of Electrical & Computer Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
1
Scopus citations
Overview
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Dive into the research topics of 'Higher-order breakdown in epitaxial P
+
N/N
+
junctions'. Together they form a unique fingerprint.
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Keyphrases
Epitaxial
100%
High-order
100%
Second Breakdown
100%
Voltage Drop
75%
Voltage Level
50%
Light Intensity
50%
External Effects
50%
Internal Effects
50%
Breakdown Characteristics
50%
Single Device
25%
Current Distribution
25%
Microscopic Observation
25%
Internal Processes
25%
P-n Junction
25%
Average Behavior
25%
Reverse Bias
25%
Sine Wave
25%
Natural Areas
25%
Reverse Current
25%
Reverse Direction
25%
Microscope Observation
25%
Current Concentration
25%
External Current
25%
Avalanche Breakdown
25%
Avalanche multiplication
25%
Junction Transistors
25%
Current Drop
25%
Circular Device
25%
Secondary Breakdown
25%
Microplasma
25%
Microscopic Measurement
25%
Engineering
Voltage Drop
100%
Internals
66%
Similarities
66%
Hot Spot
66%
Single Device
33%
Reverse Bias
33%
Current Distribution
33%
Larger Quantity
33%
Internal Process
33%
Avalanche Multiplication
33%
Reverse Direction
33%
Predictable Region
33%
Junction Transistor
33%
Microplasmas
33%
Physics
Luminous Intensity
100%
Sine Wave
50%
Critical Current
50%
Current Distribution
50%
Junction Transistor
50%
Microplasmas
50%
Neuroscience
Behavior (Neuroscience)
100%
Eptifibatide
100%