Highly efficient Ge-Rich Ge xPb 1-x Te thermoelectric alloys

Yaniv Gelbstein; Boaz Dado; Ohad Ben-Yehuda; Yatir Sadia; Zinovy Dashevsky; Moshe P. Dariel

doi:10.1007/s11664-009-1012-z

Highly efficient Ge-Rich Ge _xPb _1-x Te thermoelectric alloys

Yaniv Gelbstein, Boaz Dado, Ohad Ben-Yehuda, Yatir Sadia, Zinovy Dashevsky, Moshe P. Dariel

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

65 Scopus citations

Abstract

The search for alternative energy sources is presently at the forefront of applied research. In this context, thermoelectricity for direct energy conversion from thermal to electrical energy plays an important role. This paper is concerned with the development of highly efficient p-type Ge _xPb _1-x Te alloys for thermoelectric applications, using spark plasma sintering. The carrier concentration of GeTe was varied by alloying of PbTe and/or by Bi ₂Te ₃ doping. Very high ZT values up to ∼1.8 at 500°C were obtained by doping Pb _0.13Ge _0.87Te with 3 mol% Bi ₂Te ₃.

Original language	English
Pages (from-to)	2049-2052
Number of pages	4
Journal	Journal of Electronic Materials
Volume	39
DOIs	https://doi.org/10.1007/s11664-009-1012-z
State	Published - 1 Sep 2010

Keywords

GeTe
PbTe
SPS
Thermoelectrics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-009-1012-z

Cite this

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abstract = "The search for alternative energy sources is presently at the forefront of applied research. In this context, thermoelectricity for direct energy conversion from thermal to electrical energy plays an important role. This paper is concerned with the development of highly efficient p-type Ge xPb 1-x Te alloys for thermoelectric applications, using spark plasma sintering. The carrier concentration of GeTe was varied by alloying of PbTe and/or by Bi 2Te 3 doping. Very high ZT values up to ∼1.8 at 500°C were obtained by doping Pb 0.13Ge 0.87Te with 3 mol% Bi 2Te 3.",

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AU - Gelbstein, Yaniv

AU - Dado, Boaz

AU - Ben-Yehuda, Ohad

AU - Sadia, Yatir

AU - Dashevsky, Zinovy

AU - Dariel, Moshe P.

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AB - The search for alternative energy sources is presently at the forefront of applied research. In this context, thermoelectricity for direct energy conversion from thermal to electrical energy plays an important role. This paper is concerned with the development of highly efficient p-type Ge xPb 1-x Te alloys for thermoelectric applications, using spark plasma sintering. The carrier concentration of GeTe was varied by alloying of PbTe and/or by Bi 2Te 3 doping. Very high ZT values up to ∼1.8 at 500°C were obtained by doping Pb 0.13Ge 0.87Te with 3 mol% Bi 2Te 3.

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