Problem of a hydrogen diffusion along a grain boundary during the process of hydrogen passivation of grain boundary traps and degradation of passivated polysilicon was considered. Possible mechanisms of hydrogen interaction with grain boundary were discussed. It was shown that grain boundary diffusivity for low angle and near-special boundaries is equal to that for grain. The dependence of grain boundary diffusion on both concentration of the grain boundary centers of a hydrogen capture and hydrogen-trap bond energy was analyzed. It was found that the depth of passivation h approximately tn, n > 1/2 . The n value depends on NT and the bond energy E. When NT → ∞ and E → ∞, n → 1. Parameters of grain boundary diffusion were outlined to depend on boundary structure. EBIC measurements have shown that both passivation of grain boundaries and their degradation are different for different boundaries.
|Number of pages||6|
|State||Published - 1 Jan 1991|
|Event||Proceedings of the 4th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology -GADEST '91 - Chossewitz, Ger|
Duration: 13 Oct 1991 → 19 Oct 1991
|Conference||Proceedings of the 4th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology -GADEST '91|
|Period||13/10/91 → 19/10/91|