Hydrogenation of laser-crystallized a-Si:H films

M. V. Khenkin; D. V. Amasev; A. G. Kazanskii; P. A. Forsh

Hydrogenation of laser-crystallized a-Si:H films

M. V. Khenkin, D. V. Amasev, A. G. Kazanskii, P. A. Forsh

Research output: Contribution to journal › Article › peer-review

Abstract

Ultrafast laser processing of semiconductors is a rapidly developing field of material science at the moment. In particular, femtosecond laser crystallization of amorphous hydrogenated silicon thin films has a big potential in photovoltaics. However laser treatment causes dehydrogenation process which decreases materials' photosensitivity and thus limiting its application for optoelectronics. In present paper we studied photoelectric properties of laser-modified amorphous silicon films. Two different hydrogenation procedures were employed to restore films' hydrogen content: keeping in hydrogen plasma and in high-pressure hydrogen atmosphere. The effectiveness of applied procedures for increasing materials' photosensitivity is discussed.

Original language	English
Article number	03048
Journal	Journal of Nano- and Electronic Physics
Volume	7
Issue number	3
State	Published - 1 Jan 2015
Externally published	Yes

Keywords

Amorphous hydrogenated silicon
Hydrogen content
Laser crystallization
Nanocrystalline hydrogenated silicon
Post-hydrogenation

ASJC Scopus subject areas

Radiation
General Materials Science
Condensed Matter Physics

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

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title = "Hydrogenation of laser-crystallized a-Si:H films",

abstract = "Ultrafast laser processing of semiconductors is a rapidly developing field of material science at the moment. In particular, femtosecond laser crystallization of amorphous hydrogenated silicon thin films has a big potential in photovoltaics. However laser treatment causes dehydrogenation process which decreases materials' photosensitivity and thus limiting its application for optoelectronics. In present paper we studied photoelectric properties of laser-modified amorphous silicon films. Two different hydrogenation procedures were employed to restore films' hydrogen content: keeping in hydrogen plasma and in high-pressure hydrogen atmosphere. The effectiveness of applied procedures for increasing materials' photosensitivity is discussed.",

keywords = "Amorphous hydrogenated silicon, Hydrogen content, Laser crystallization, Nanocrystalline hydrogenated silicon, Post-hydrogenation",

author = "Khenkin, {M. V.} and Amasev, {D. V.} and Kazanskii, {A. G.} and Forsh, {P. A.}",

note = "Publisher Copyright: {\textcopyright} 2015 Sumy State University.",

year = "2015",

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AU - Khenkin, M. V.

AU - Amasev, D. V.

AU - Kazanskii, A. G.

AU - Forsh, P. A.

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Ultrafast laser processing of semiconductors is a rapidly developing field of material science at the moment. In particular, femtosecond laser crystallization of amorphous hydrogenated silicon thin films has a big potential in photovoltaics. However laser treatment causes dehydrogenation process which decreases materials' photosensitivity and thus limiting its application for optoelectronics. In present paper we studied photoelectric properties of laser-modified amorphous silicon films. Two different hydrogenation procedures were employed to restore films' hydrogen content: keeping in hydrogen plasma and in high-pressure hydrogen atmosphere. The effectiveness of applied procedures for increasing materials' photosensitivity is discussed.

AB - Ultrafast laser processing of semiconductors is a rapidly developing field of material science at the moment. In particular, femtosecond laser crystallization of amorphous hydrogenated silicon thin films has a big potential in photovoltaics. However laser treatment causes dehydrogenation process which decreases materials' photosensitivity and thus limiting its application for optoelectronics. In present paper we studied photoelectric properties of laser-modified amorphous silicon films. Two different hydrogenation procedures were employed to restore films' hydrogen content: keeping in hydrogen plasma and in high-pressure hydrogen atmosphere. The effectiveness of applied procedures for increasing materials' photosensitivity is discussed.

KW - Amorphous hydrogenated silicon

KW - Hydrogen content

KW - Laser crystallization

KW - Nanocrystalline hydrogenated silicon

KW - Post-hydrogenation

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M3 - Article

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SN - 2077-6772

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JO - Journal of Nano- and Electronic Physics

JF - Journal of Nano- and Electronic Physics

IS - 3

M1 - 03048

ER -

Hydrogenation of laser-crystallized a-Si:H films

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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