Abstract
The impact of electron injection on minority carrier (hole) diffusion length and lifetime at variable temperatures was studied using electron beam-induced current, continuous, and time-resolved cathodoluminescence techniques. The hole diffusion length increased from 306 nm to 347 nm with an electron injection charge density up to 117.5 nC/μm3, corresponding to the lifetime changing from 77 ps to 101 ps. Elongation of the diffusion length was attributed to the increase in the non-equilibrium carrier lifetime, which was determined using ultrafast time-resolved cathodoluminescence and related to non-equilibrium carrier trapping on gallium vacancy levels in the GaN forbidden gap.
Original language | English |
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Article number | 085702 |
Journal | Journal of Applied Physics |
Volume | 128 |
Issue number | 8 |
DOIs | |
State | Published - 28 Aug 2020 |
ASJC Scopus subject areas
- General Physics and Astronomy