Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires

C. Schwarz, E. Flitsiyan, L. Chernyak, V. Casian, R. Schneck, Z. Dashevsky, S. Chu, J. L. Liu

Research output: Contribution to journalArticlepeer-review

Abstract

Minority carrier diffusion length in p-type Sb-doped ZnO nanowires was measured as a function of temperature and forward bias injection duration. The minority carrier diffusion length displays a thermally activated length increase with the energy of 144 5 meV. The forward bias injection exhibits an increase in diffusion length with the activation energy of 217 20 meV, indicating the possible involvement of a SbZn-2VZn acceptor complex.

Original languageEnglish
Article number056108
JournalJournal of Applied Physics
Volume110
Issue number5
DOIs
StatePublished - 1 Sep 2011

ASJC Scopus subject areas

  • Physics and Astronomy (all)

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