Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires

C. Schwarz; E. Flitsiyan; L. Chernyak; V. Casian; R. Schneck; Z. Dashevsky; S. Chu; J. L. Liu

doi:10.1063/1.3633224

Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires

C. Schwarz, E. Flitsiyan, L. Chernyak, V. Casian, R. Schneck, Z. Dashevsky, S. Chu, J. L. Liu

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Minority carrier diffusion length in p-type Sb-doped ZnO nanowires was measured as a function of temperature and forward bias injection duration. The minority carrier diffusion length displays a thermally activated length increase with the energy of 144 5 meV. The forward bias injection exhibits an increase in diffusion length with the activation energy of 217 20 meV, indicating the possible involvement of a Sb_Zn-2V_Zn acceptor complex.

Original language	English
Article number	056108
Journal	Journal of Applied Physics
Volume	110
Issue number	5
DOIs	https://doi.org/10.1063/1.3633224
State	Published - 1 Sep 2011

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.3633224

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title = "Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires",

abstract = "Minority carrier diffusion length in p-type Sb-doped ZnO nanowires was measured as a function of temperature and forward bias injection duration. The minority carrier diffusion length displays a thermally activated length increase with the energy of 144 5 meV. The forward bias injection exhibits an increase in diffusion length with the activation energy of 217 20 meV, indicating the possible involvement of a SbZn-2VZn acceptor complex.",

author = "C. Schwarz and E. Flitsiyan and L. Chernyak and V. Casian and R. Schneck and Z. Dashevsky and S. Chu and Liu, {J. L.}",

note = "Funding Information: The authors would like to thank the National Science Foundation (ECCS Grant No. 0900971) and the U.S.-Israel Binational Science Foundation (Grant No. 2008328) for financial support.",

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T1 - Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires

AU - Schwarz, C.

AU - Flitsiyan, E.

AU - Chernyak, L.

AU - Casian, V.

AU - Schneck, R.

AU - Dashevsky, Z.

AU - Chu, S.

AU - Liu, J. L.

N1 - Funding Information: The authors would like to thank the National Science Foundation (ECCS Grant No. 0900971) and the U.S.-Israel Binational Science Foundation (Grant No. 2008328) for financial support.

PY - 2011/9/1

Y1 - 2011/9/1

N2 - Minority carrier diffusion length in p-type Sb-doped ZnO nanowires was measured as a function of temperature and forward bias injection duration. The minority carrier diffusion length displays a thermally activated length increase with the energy of 144 5 meV. The forward bias injection exhibits an increase in diffusion length with the activation energy of 217 20 meV, indicating the possible involvement of a SbZn-2VZn acceptor complex.

AB - Minority carrier diffusion length in p-type Sb-doped ZnO nanowires was measured as a function of temperature and forward bias injection duration. The minority carrier diffusion length displays a thermally activated length increase with the energy of 144 5 meV. The forward bias injection exhibits an increase in diffusion length with the activation energy of 217 20 meV, indicating the possible involvement of a SbZn-2VZn acceptor complex.

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U2 - 10.1063/1.3633224

DO - 10.1063/1.3633224

M3 - Article

AN - SCOPUS:80052921130

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VL - 110

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

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ER -

Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires

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