Implementation of machine learning for high-volume manufacturing metrology challenges (Conference Presentation)

  • Padraig Timoney
  • , Taher Kagalwala
  • , Edward Reis
  • , Houssam Lazkani
  • , Jonathan Hurley
  • , Haibo Liu
  • , Charles Kang
  • , Paul Isbester
  • , Naren Yellai
  • , Michael Shifrin
  • , Yoav Etzioni

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

In recent years, the combination of device scaling, complex 3D device architecture and tightening process tolerances have strained the capabilities of optical metrology tools to meet process needs. Two main categories of approaches have been taken to address the evolving process needs. In the first category, new hardware configurations are developed to provide more spectral sensitivity. Most of this category of work will enable next generation optical metrology tools to try to maintain pace with next generation process needs. In the second category, new innovative algorithms have been pursued to increase the value of the existing measurement signal. These algorithms aim to boost sensitivity to the measurement parameter of interest, while reducing the impact of other factors that contribute to signal variability but are not influenced by the process of interest. This paper will evaluate the suitability of machine learning to address high volume manufacturing metrology requirements in both front end of line (FEOL) and back end of line (BEOL) sectors from advanced technology nodes. In the FEOL sector, initial feasibility has been demonstrated to predict the fin CD values from an inline measurement using machine learning. In this study, OCD spectra were acquired after an etch process that occurs earlier in the process flow than where the inline CD is measured. The fin hard mask etch process is known to impact the downstream inline CD value. Figure 1 shows the correlation of predicted CD vs downstream inline CD measurement obtained after the training of the machine learning algorithm. For BEOL, machine learning is shown to provide an additional source of information in prediction of electrical resistance from structures that are not compatible for direct copper height measurement. Figure 2 compares the trench height correlation to electrical resistance (Rs) and the correlation of predicted Rs to the e-test Rs value for a far back end of line (FBEOL) metallization level across 3 products. In the case of product C, it is found that the predicted Rs correlation to the e-test value is significantly improved utilizing spectra acquired at the e-test structure. This paper will explore the considerations required to enable use of machine learning derived metrology output to enable improved process monitoring and control. Further results from the FEOL and BEOL sectors will be presented, together with further discussion on future proliferation of machine learning based metrology solutions in high volume manufacturing.

Original languageEnglish
Title of host publicationMetrology, Inspection, and Process Control for Microlithography XXXII
EditorsVladimir A. Ukraintsev, Ofer Adan
PublisherSPIE
ISBN (Electronic)9781510616622
DOIs
StatePublished - 1 Jan 2018
Externally publishedYes
EventMetrology, Inspection, and Process Control for Microlithography XXXII 2018 - San Jose, United States
Duration: 26 Feb 20181 Mar 2018

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10585
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceMetrology, Inspection, and Process Control for Microlithography XXXII 2018
Country/TerritoryUnited States
CitySan Jose
Period26/02/181/03/18

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 9 - Industry, Innovation, and Infrastructure
    SDG 9 Industry, Innovation, and Infrastructure

Keywords

  • E Test
  • High Volume Manufacturing
  • Machine Learning
  • Metrology Budget
  • Model Complexity
  • Optical Metrology
  • Process Control

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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