Improvement of MOSFET subthreshold leakage current by its irradiation with hydrogen radicals generated in microwave-excited high-density inert gas plasma

Y. Saito; H. Takahashi; K. Ohtsubo; M. Hirayama; S. Sugawa; H. Aharoni; T. Ohmi

Improvement of MOSFET subthreshold leakage current by its irradiation with hydrogen radicals generated in microwave-excited high-density inert gas plasma

Y. Saito, H. Takahashi, K. Ohtsubo, M. Hirayama, S. Sugawa, H. Aharoni, T. Ohmi

Research output: Contribution to journal › Conference article › peer-review

Abstract

MOSFET's subthreshold leakage currents are improved by their exposure to hydrogen radicals, generated in microwave-excited Ar/H₂ plasma. This mixture was chosen since Ar plasma resulted both high production of hydrogen radicals and at the same time, only small changes of the exposed MOS characteristics. Experiments including exposure to plasma with different total and partial pressures and inert gases are presented.

Original language	English
Pages (from-to)	319-326
Number of pages	8
Journal	Annual Proceedings - Reliability Physics (Symposium)
State	Published - 1 Jan 2001
Externally published	Yes
Event	39th Annual International Reliability Physics Symposium - Orlando, FL, United States Duration: 30 Apr 2001 → 3 May 2001

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Cite this

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title = "Improvement of MOSFET subthreshold leakage current by its irradiation with hydrogen radicals generated in microwave-excited high-density inert gas plasma",

abstract = "MOSFET's subthreshold leakage currents are improved by their exposure to hydrogen radicals, generated in microwave-excited Ar/H2 plasma. This mixture was chosen since Ar plasma resulted both high production of hydrogen radicals and at the same time, only small changes of the exposed MOS characteristics. Experiments including exposure to plasma with different total and partial pressures and inert gases are presented.",

author = "Y. Saito and H. Takahashi and K. Ohtsubo and M. Hirayama and S. Sugawa and H. Aharoni and T. Ohmi",

year = "2001",

month = jan,

day = "1",

language = "English",

pages = "319--326",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

issn = "0099-9512",

note = "39th Annual International Reliability Physics Symposium ; Conference date: 30-04-2001 Through 03-05-2001",

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TY - JOUR

T1 - Improvement of MOSFET subthreshold leakage current by its irradiation with hydrogen radicals generated in microwave-excited high-density inert gas plasma

AU - Saito, Y.

AU - Takahashi, H.

AU - Ohtsubo, K.

AU - Hirayama, M.

AU - Sugawa, S.

AU - Aharoni, H.

AU - Ohmi, T.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - MOSFET's subthreshold leakage currents are improved by their exposure to hydrogen radicals, generated in microwave-excited Ar/H2 plasma. This mixture was chosen since Ar plasma resulted both high production of hydrogen radicals and at the same time, only small changes of the exposed MOS characteristics. Experiments including exposure to plasma with different total and partial pressures and inert gases are presented.

AB - MOSFET's subthreshold leakage currents are improved by their exposure to hydrogen radicals, generated in microwave-excited Ar/H2 plasma. This mixture was chosen since Ar plasma resulted both high production of hydrogen radicals and at the same time, only small changes of the exposed MOS characteristics. Experiments including exposure to plasma with different total and partial pressures and inert gases are presented.

UR - http://www.scopus.com/inward/record.url?scp=0034984868&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034984868

SN - 0099-9512

SP - 319

EP - 326

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

T2 - 39th Annual International Reliability Physics Symposium

Y2 - 30 April 2001 through 3 May 2001

ER -

Improvement of MOSFET subthreshold leakage current by its irradiation with hydrogen radicals generated in microwave-excited high-density inert gas plasma

Abstract

ASJC Scopus subject areas

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