Improvement of MOSFET subthreshold leakage current by its irradiation with hydrogen radicals generated in microwave-excited high-density inert gas plasma

Y. Saito, H. Takahashi, K. Ohtsubo, M. Hirayama, S. Sugawa, H. Aharoni, T. Ohmi

Research output: Contribution to journalConference articlepeer-review

Abstract

MOSFET's subthreshold leakage currents are improved by their exposure to hydrogen radicals, generated in microwave-excited Ar/H2 plasma. This mixture was chosen since Ar plasma resulted both high production of hydrogen radicals and at the same time, only small changes of the exposed MOS characteristics. Experiments including exposure to plasma with different total and partial pressures and inert gases are presented.

Original languageEnglish
Pages (from-to)319-326
Number of pages8
JournalAnnual Proceedings - Reliability Physics (Symposium)
StatePublished - 1 Jan 2001
Externally publishedYes
Event39th Annual International Reliability Physics Symposium - Orlando, FL, United States
Duration: 30 Apr 20013 May 2001

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