Improving the reliability and the insulation properties of gate oxide in the gate injection mode by using a new procedure of (100) Si surface and Si/SiO2 interface treatments

Takeshi Ohkawa; Osamu Nakamura; Shigetoshi Sugawa; Herzl Aharoni; Tadahiro Ohmi

doi:10.1109/16.974737

Improving the reliability and the insulation properties of gate oxide in the gate injection mode by using a new procedure of (100) Si surface and Si/SiO₂ interface treatments

Takeshi Ohkawa, Osamu Nakamura, Shigetoshi Sugawa, Herzl Aharoni, Tadahiro Ohmi

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A new two-step processing combination, for MOS devices improvement, is presented. It is composed of a pregate oxidation of (100) Si surface atomic scale flattening, which improves only the device breakdown reliability. Adding a postgate oxidation annealing step, using nitrogen monoxide (NO) gas mixture, reduces the degradation of the leakage current, which results from current stress application. A MOSFET with a gate oxide grown on an atomic scale flattened Si surface, exhibits a superior I_D-V_D characteristics, with respect to MOSFET fabricated on conventionally treated Si surface.

Original language	English
Pages (from-to)	2957-2959
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	12
DOIs	https://doi.org/10.1109/16.974737
State	Published - 1 Dec 2001

Keywords

Atomic scale Si surface flattening
Current stress
Gate injection
Gate oxide
Leakage current
Nitrogen-monoxide annealing
Reliability

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/16.974737

Cite this

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title = "Improving the reliability and the insulation properties of gate oxide in the gate injection mode by using a new procedure of (100) Si surface and Si/SiO2 interface treatments",

abstract = "A new two-step processing combination, for MOS devices improvement, is presented. It is composed of a pregate oxidation of (100) Si surface atomic scale flattening, which improves only the device breakdown reliability. Adding a postgate oxidation annealing step, using nitrogen monoxide (NO) gas mixture, reduces the degradation of the leakage current, which results from current stress application. A MOSFET with a gate oxide grown on an atomic scale flattened Si surface, exhibits a superior ID-VD characteristics, with respect to MOSFET fabricated on conventionally treated Si surface.",

keywords = "Atomic scale Si surface flattening, Current stress, Gate injection, Gate oxide, Leakage current, Nitrogen-monoxide annealing, Reliability",

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Improving the reliability and the insulation properties of gate oxide in the gate injection mode by using a new procedure of (100) Si surface and Si/SiO₂ interface treatments. / Ohkawa, Takeshi; Nakamura, Osamu; Sugawa, Shigetoshi et al.
In: IEEE Transactions on Electron Devices, Vol. 48, No. 12, 01.12.2001, p. 2957-2959.

Research output: Contribution to journal › Article › peer-review

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T1 - Improving the reliability and the insulation properties of gate oxide in the gate injection mode by using a new procedure of (100) Si surface and Si/SiO2 interface treatments

AU - Ohkawa, Takeshi

AU - Nakamura, Osamu

AU - Sugawa, Shigetoshi

AU - Aharoni, Herzl

AU - Ohmi, Tadahiro

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KW - Atomic scale Si surface flattening

KW - Current stress

KW - Gate injection

KW - Gate oxide

KW - Leakage current

KW - Nitrogen-monoxide annealing

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