In-pixel autoexposure CMOS APS

Orly Yadid-Pecht; Alexander Belenky

doi:10.1109/JSSC.2003.811984

In-pixel autoexposure CMOS APS

Orly Yadid-Pecht, Alexander Belenky

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

A CMOS active pixel sensor (APS) with in-pixel autoexposure and a wide dynamic-range linear output is described. The chip features a unique architecture enabling a customized number of additional bits per pixel per readout, with minimal effect on the sensor spatial or temporal resolution. By utilizing multiple readouts via real-time feedback, each pixel in the field of view can automatically set an independent exposure time, according to its illumination. A customized, large increase in the dynamic range can be achieved and a scene containing both bright and dark regions can be captured. A prototype of 64 × 64 pixels has been fabricated using 1-poly 3-metal CMOS 0.5 μm n-well process available through MOSIS. Power dissipation is 3.7 mW at V_DD = 5 V. The special functions have been verified experimentally, and an increase of 2 bits over the inherent dynamic range captured is shown.

Original language	English
Pages (from-to)	1425-1428
Number of pages	4
Journal	IEEE Journal of Solid-State Circuits
Volume	38
Issue number	8
DOIs	https://doi.org/10.1109/JSSC.2003.811984
State	Published - 1 Aug 2003

Keywords

Active pixel sensor (APS)
CMOS imagers
Column parallel architecture
Dynamic range
Image sensor
Integration time
VLSI

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/JSSC.2003.811984

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title = "In-pixel autoexposure CMOS APS",

abstract = "A CMOS active pixel sensor (APS) with in-pixel autoexposure and a wide dynamic-range linear output is described. The chip features a unique architecture enabling a customized number of additional bits per pixel per readout, with minimal effect on the sensor spatial or temporal resolution. By utilizing multiple readouts via real-time feedback, each pixel in the field of view can automatically set an independent exposure time, according to its illumination. A customized, large increase in the dynamic range can be achieved and a scene containing both bright and dark regions can be captured. A prototype of 64 × 64 pixels has been fabricated using 1-poly 3-metal CMOS 0.5 μm n-well process available through MOSIS. Power dissipation is 3.7 mW at VDD = 5 V. The special functions have been verified experimentally, and an increase of 2 bits over the inherent dynamic range captured is shown.",

keywords = "Active pixel sensor (APS), CMOS imagers, Column parallel architecture, Dynamic range, Image sensor, Integration time, VLSI",

author = "Orly Yadid-Pecht and Alexander Belenky",

note = "Funding Information: Manuscript received January 29, 2002; revised January 25, 2003. This work was supported by the Israeli Ministry of Science. The authors are with The VLSI Systems Center, Ben-Gurion University, Beer-Sheva 84105, Israel (e-mail: oyp@ee.bgu.ac.il; belenky@ee.bgu.ac.il). Digital Object Identifier 10.1109/JSSC.2003.811984",

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AU - Belenky, Alexander

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N2 - A CMOS active pixel sensor (APS) with in-pixel autoexposure and a wide dynamic-range linear output is described. The chip features a unique architecture enabling a customized number of additional bits per pixel per readout, with minimal effect on the sensor spatial or temporal resolution. By utilizing multiple readouts via real-time feedback, each pixel in the field of view can automatically set an independent exposure time, according to its illumination. A customized, large increase in the dynamic range can be achieved and a scene containing both bright and dark regions can be captured. A prototype of 64 × 64 pixels has been fabricated using 1-poly 3-metal CMOS 0.5 μm n-well process available through MOSIS. Power dissipation is 3.7 mW at VDD = 5 V. The special functions have been verified experimentally, and an increase of 2 bits over the inherent dynamic range captured is shown.

AB - A CMOS active pixel sensor (APS) with in-pixel autoexposure and a wide dynamic-range linear output is described. The chip features a unique architecture enabling a customized number of additional bits per pixel per readout, with minimal effect on the sensor spatial or temporal resolution. By utilizing multiple readouts via real-time feedback, each pixel in the field of view can automatically set an independent exposure time, according to its illumination. A customized, large increase in the dynamic range can be achieved and a scene containing both bright and dark regions can be captured. A prototype of 64 × 64 pixels has been fabricated using 1-poly 3-metal CMOS 0.5 μm n-well process available through MOSIS. Power dissipation is 3.7 mW at VDD = 5 V. The special functions have been verified experimentally, and an increase of 2 bits over the inherent dynamic range captured is shown.

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KW - CMOS imagers

KW - Column parallel architecture

KW - Dynamic range

KW - Image sensor

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In-pixel autoexposure CMOS APS

Abstract

Keywords

ASJC Scopus subject areas

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