In-Plane Nanowires with Arbitrary Shapes on Amorphous Substrates by Artificial Epitaxy

Regev Ben-Zvi, Hadassah Burrows, Mark Schvartzman, Ora Bitton, Iddo Pinkas, Ifat Kaplan-Ashiri, Olga Brontvein, Ernesto Joselevich

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


The challenge of nanowire assembly is still one of the major obstacles toward their efficient integration into functional systems. One strategy to overcome this obstacle is the guided growth approach, in which the growth of in-plane nanowires is guided by epitaxial and graphoepitaxial relations with the substrate to yield dense arrays of aligned nanowires. This method relies on crystalline substrates which are generally expensive and incompatible with silicon-based technologies. In this work, we expand the guided growth approach into noncrystalline substrates and demonstrate the guided growth of horizontal nanowires along straight and arbitrarily shaped amorphous nanolithographic open guides on silicon wafers. Nanoimprint lithography is used as a high-throughput method for the fabrication of the high-resolution guiding features. We first grow five different semiconductor materials (GaN, ZnSe, CdS, ZnTe, and ZnO) along straight ridges and trenches, demonstrating the generality of this method. Through crystallographic analysis we find that despite the absence of any epitaxial relations with the substrate, the nanowires grow as single crystals in preferred crystallographic orientations. To further expand the guided growth approach beyond straight nanowires, GaN and ZnSe were grown also along curved and kinked configurations to form different shapes, including sinusoidal and zigzag-shaped nanowires. Photoluminescence and cathodoluminescence were used as noninvasive tools to characterize the sine wave-shaped nanowires. We discuss the similarities and differences between in-plane nanowires grown by epitaxy/graphoepitaxy and artificial epitaxy in terms of generality, morphology, crystallinity, and optical properties.

Original languageEnglish
Pages (from-to)5572-5582
Number of pages11
JournalACS Nano
Issue number5
StatePublished - 28 May 2019


  • CdS
  • GaN
  • ZnO
  • ZnSe
  • ZnTe
  • artificial epitaxy
  • guided nanowires
  • nanoimprint lithography

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy


Dive into the research topics of 'In-Plane Nanowires with Arbitrary Shapes on Amorphous Substrates by Artificial Epitaxy'. Together they form a unique fingerprint.

Cite this