In praise of the confined vertical growth of semiconductors

A. Horowitz; Y. S. Horowitz

doi:10.1016/0025-5408(86)90229-1

In praise of the confined vertical growth of semiconductors

A. Horowitz, Y. S. Horowitz

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The growth of semiconductor materials via the confined vertical method has been criticized in the literature because of the expansion of the material upon solidification. In this paper, the arguments against confined vertical growth are rebutted and the merits of the techniques are discussed. If heat flows are controlled to maintain convex solid-melt interface in confined vertical growth, high quality crystals can be grown. In most cases, these will be superior to "state of the art" Czochralski grown crystals. The full potential of the technique lies, to a great extent, in the development of compatible insulating crucibles.

Original language	English
Pages (from-to)	1123-1129
Number of pages	7
Journal	Materials Research Bulletin
Volume	21
Issue number	9
DOIs	https://doi.org/10.1016/0025-5408(86)90229-1
State	Published - 1 Jan 1986

Keywords

gallium arsenide
gallium phosphide
indium phosphide
semiconductors

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/0025-5408(86)90229-1

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abstract = "The growth of semiconductor materials via the confined vertical method has been criticized in the literature because of the expansion of the material upon solidification. In this paper, the arguments against confined vertical growth are rebutted and the merits of the techniques are discussed. If heat flows are controlled to maintain convex solid-melt interface in confined vertical growth, high quality crystals can be grown. In most cases, these will be superior to {"}state of the art{"} Czochralski grown crystals. The full potential of the technique lies, to a great extent, in the development of compatible insulating crucibles.",

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N2 - The growth of semiconductor materials via the confined vertical method has been criticized in the literature because of the expansion of the material upon solidification. In this paper, the arguments against confined vertical growth are rebutted and the merits of the techniques are discussed. If heat flows are controlled to maintain convex solid-melt interface in confined vertical growth, high quality crystals can be grown. In most cases, these will be superior to "state of the art" Czochralski grown crystals. The full potential of the technique lies, to a great extent, in the development of compatible insulating crucibles.

AB - The growth of semiconductor materials via the confined vertical method has been criticized in the literature because of the expansion of the material upon solidification. In this paper, the arguments against confined vertical growth are rebutted and the merits of the techniques are discussed. If heat flows are controlled to maintain convex solid-melt interface in confined vertical growth, high quality crystals can be grown. In most cases, these will be superior to "state of the art" Czochralski grown crystals. The full potential of the technique lies, to a great extent, in the development of compatible insulating crucibles.

KW - gallium arsenide

KW - gallium phosphide

KW - indium phosphide

KW - semiconductors

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JF - Materials Research Bulletin

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ER -

In praise of the confined vertical growth of semiconductors

Abstract

Keywords

ASJC Scopus subject areas

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