In praise of the confined vertical growth of semiconductors

A. Horowitz, Y. S. Horowitz

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


The growth of semiconductor materials via the confined vertical method has been criticized in the literature because of the expansion of the material upon solidification. In this paper, the arguments against confined vertical growth are rebutted and the merits of the techniques are discussed. If heat flows are controlled to maintain convex solid-melt interface in confined vertical growth, high quality crystals can be grown. In most cases, these will be superior to "state of the art" Czochralski grown crystals. The full potential of the technique lies, to a great extent, in the development of compatible insulating crucibles.

Original languageEnglish
Pages (from-to)1123-1129
Number of pages7
JournalMaterials Research Bulletin
Issue number9
StatePublished - 1 Jan 1986


  • gallium arsenide
  • gallium phosphide
  • indium phosphide
  • semiconductors

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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