In Situ Computerized Optical Reflectivity Measurement System For Ion Implantation

Pieter L. Swart; Beatrys M. Lacquet; Michael F. Grobler; Herzl Aharoni

doi:10.1109/23.199481

In Situ Computerized Optical Reflectivity Measurement System For Ion Implantation

Pieter L. Swart, Beatrys M. Lacquet, Michael F. Grobler, Herzl Aharoni

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Abstract

A computerized in situ optical reflectivity measurement system for the quantitative determination of material parameter changes of a substrate during the process of ion implantation, is presented. These changes are related to the extent and nature of the induced crystal disorder in the substrate. The system comprises an optical reflectometer, with data acquisition and signal processing capabilities. For each sample a case history of the implant is obtained in the form of a continuous graph of reflectivity vs. a desired implantation parameter (e.g., dose). Examples regarding the implantation of _3fP ₊, ₄₈Ar ₊, and ₁₄N ₊are presented. Additional suggestions for further system development and applications are also made. Among the advantages of in situ measurements are the time-effort-expenses savings, higher yield of experimental data per sample, higher accuracy, repeatability, and various possibilities of process control.

Original language	English
Pages (from-to)	2-10
Number of pages	9
Journal	IEEE Transactions on Nuclear Science
Volume	40
Issue number	1
DOIs	https://doi.org/10.1109/23.199481
State	Published - 1 Jan 1993
Externally published	Yes

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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@article{244c398ef94745a88d5d1159e1828963,

title = "In Situ Computerized Optical Reflectivity Measurement System For Ion Implantation",

abstract = "A computerized in situ optical reflectivity measurement system for the quantitative determination of material parameter changes of a substrate during the process of ion implantation, is presented. These changes are related to the extent and nature of the induced crystal disorder in the substrate. The system comprises an optical reflectometer, with data acquisition and signal processing capabilities. For each sample a case history of the implant is obtained in the form of a continuous graph of reflectivity vs. a desired implantation parameter (e.g., dose). Examples regarding the implantation of 3fP +, 48Ar +, and 14N +are presented. Additional suggestions for further system development and applications are also made. Among the advantages of in situ measurements are the time-effort-expenses savings, higher yield of experimental data per sample, higher accuracy, repeatability, and various possibilities of process control.",

author = "Swart, {Pieter L.} and Lacquet, {Beatrys M.} and Grobler, {Michael F.} and Herzl Aharoni",

note = "Funding Information: Manuscript received September 10,1992. This paper was supported by resBerandts fr om the Foundation for Research and Rand Afrhans Unive.rsity. The are with &mm S o w a and S F -e Research Group, h 4 a k - d ~L aboratmy, Faculty of Engmeermg, Rand Afrikaans University, P.O. Boor 524, Auckland Park, 2006, South Africa. IEEE Log Number m 3 5 1 . Funding Information: VI. ACKNOWLEDGMENT The authors wish to express their gratitude towards the Foundation for Research Development and Rand Afrikaans University for the research grants which enabled them to perform the work.",

year = "1993",

month = jan,

day = "1",

doi = "10.1109/23.199481",

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AU - Swart, Pieter L.

AU - Lacquet, Beatrys M.

AU - Grobler, Michael F.

AU - Aharoni, Herzl

N1 - Funding Information: Manuscript received September 10,1992. This paper was supported by resBerandts fr om the Foundation for Research and Rand Afrhans Unive.rsity. The are with &mm S o w a and S F -e Research Group, h 4 a k - d ~L aboratmy, Faculty of Engmeermg, Rand Afrikaans University, P.O. Boor 524, Auckland Park, 2006, South Africa. IEEE Log Number m 3 5 1 . Funding Information: VI. ACKNOWLEDGMENT The authors wish to express their gratitude towards the Foundation for Research Development and Rand Afrikaans University for the research grants which enabled them to perform the work.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - A computerized in situ optical reflectivity measurement system for the quantitative determination of material parameter changes of a substrate during the process of ion implantation, is presented. These changes are related to the extent and nature of the induced crystal disorder in the substrate. The system comprises an optical reflectometer, with data acquisition and signal processing capabilities. For each sample a case history of the implant is obtained in the form of a continuous graph of reflectivity vs. a desired implantation parameter (e.g., dose). Examples regarding the implantation of 3fP +, 48Ar +, and 14N +are presented. Additional suggestions for further system development and applications are also made. Among the advantages of in situ measurements are the time-effort-expenses savings, higher yield of experimental data per sample, higher accuracy, repeatability, and various possibilities of process control.

AB - A computerized in situ optical reflectivity measurement system for the quantitative determination of material parameter changes of a substrate during the process of ion implantation, is presented. These changes are related to the extent and nature of the induced crystal disorder in the substrate. The system comprises an optical reflectometer, with data acquisition and signal processing capabilities. For each sample a case history of the implant is obtained in the form of a continuous graph of reflectivity vs. a desired implantation parameter (e.g., dose). Examples regarding the implantation of 3fP +, 48Ar +, and 14N +are presented. Additional suggestions for further system development and applications are also made. Among the advantages of in situ measurements are the time-effort-expenses savings, higher yield of experimental data per sample, higher accuracy, repeatability, and various possibilities of process control.

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JO - IEEE Transactions on Nuclear Science

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In Situ Computerized Optical Reflectivity Measurement System For Ion Implantation

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