In-situ fabrication of three-dimensionally confined GaAs and InAs volumes via growth on non-planar patterned GaAs(001) substrates

A. Konkar, K. C. Rajkumar, Q. Xie, P. Chen, A. Madhukar, H. T. Lin, D. H. Rich

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

Three-dimensionally confined GaAs/AlGaAs and InAs/GaAs structures on 〈100〉 oriented square mesas patterned onto GaAs(001) substrates are realized, in-situ, via size-reducing molecular beam epitaxy. Two stages of mesa top pinch-off involving ∼ {103} and subsequently {101} side facets are revealed. GaAs and InAs quantum boxes with lateral linear dimensions down to 40 nm and confined by AlGaAs and GaAs, respectively, are reported. For InAs, the strain relief in mesas is found to enhance the well known ∼ 2 ML thickness for three-dimensional island formation on unpatterned substrates to, remarkably, 〉 5 ML for mesa size ∼ 75 nm. Cathodoluminescence emission from the InAs on the mesa top attests to its good optical quality.

Original languageEnglish
Pages (from-to)311-316
Number of pages6
JournalJournal of Crystal Growth
Volume150
DOIs
StatePublished - 1 Jan 1995
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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