In-situ fabrication of three-dimensionally confined GaAs and InAs volumes via growth on non-planar patterned GaAs(001) substrates

A. Konkar; K. C. Rajkumar; Q. Xie; P. Chen; A. Madhukar; H. T. Lin; D. H. Rich

doi:10.1016/0022-0248(95)80226-3

In-situ fabrication of three-dimensionally confined GaAs and InAs volumes via growth on non-planar patterned GaAs(001) substrates

A. Konkar, K. C. Rajkumar, Q. Xie, P. Chen, A. Madhukar, H. T. Lin, D. H. Rich

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Three-dimensionally confined GaAs/AlGaAs and InAs/GaAs structures on 〈100〉 oriented square mesas patterned onto GaAs(001) substrates are realized, in-situ, via size-reducing molecular beam epitaxy. Two stages of mesa top pinch-off involving ∼ {103} and subsequently {101} side facets are revealed. GaAs and InAs quantum boxes with lateral linear dimensions down to 40 nm and confined by AlGaAs and GaAs, respectively, are reported. For InAs, the strain relief in mesas is found to enhance the well known ∼ 2 ML thickness for three-dimensional island formation on unpatterned substrates to, remarkably, 〉 5 ML for mesa size ∼ 75 nm. Cathodoluminescence emission from the InAs on the mesa top attests to its good optical quality.

Original language	English
Pages (from-to)	311-316
Number of pages	6
Journal	Journal of Crystal Growth
Volume	150
DOIs	https://doi.org/10.1016/0022-0248(95)80226-3
State	Published - 1 Jan 1995
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/0022-0248(95)80226-3

Cite this

@article{785ace4adbb245a3b7380edfe57966e6,

title = "In-situ fabrication of three-dimensionally confined GaAs and InAs volumes via growth on non-planar patterned GaAs(001) substrates",

abstract = "Three-dimensionally confined GaAs/AlGaAs and InAs/GaAs structures on 〈100〉 oriented square mesas patterned onto GaAs(001) substrates are realized, in-situ, via size-reducing molecular beam epitaxy. Two stages of mesa top pinch-off involving ∼ {103} and subsequently {101} side facets are revealed. GaAs and InAs quantum boxes with lateral linear dimensions down to 40 nm and confined by AlGaAs and GaAs, respectively, are reported. For InAs, the strain relief in mesas is found to enhance the well known ∼ 2 ML thickness for three-dimensional island formation on unpatterned substrates to, remarkably, 〉 5 ML for mesa size ∼ 75 nm. Cathodoluminescence emission from the InAs on the mesa top attests to its good optical quality.",

author = "A. Konkar and Rajkumar, {K. C.} and Q. Xie and P. Chen and A. Madhukar and Lin, {H. T.} and Rich, {D. H.}",

note = "Funding Information: This work was supported by the ARO, and ONR.",

year = "1995",

month = jan,

day = "1",

doi = "10.1016/0022-0248(95)80226-3",

language = "English",

volume = "150",

pages = "311--316",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - In-situ fabrication of three-dimensionally confined GaAs and InAs volumes via growth on non-planar patterned GaAs(001) substrates

AU - Konkar, A.

AU - Rajkumar, K. C.

AU - Xie, Q.

AU - Chen, P.

AU - Madhukar, A.

AU - Lin, H. T.

AU - Rich, D. H.

N1 - Funding Information: This work was supported by the ARO, and ONR.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Three-dimensionally confined GaAs/AlGaAs and InAs/GaAs structures on 〈100〉 oriented square mesas patterned onto GaAs(001) substrates are realized, in-situ, via size-reducing molecular beam epitaxy. Two stages of mesa top pinch-off involving ∼ {103} and subsequently {101} side facets are revealed. GaAs and InAs quantum boxes with lateral linear dimensions down to 40 nm and confined by AlGaAs and GaAs, respectively, are reported. For InAs, the strain relief in mesas is found to enhance the well known ∼ 2 ML thickness for three-dimensional island formation on unpatterned substrates to, remarkably, 〉 5 ML for mesa size ∼ 75 nm. Cathodoluminescence emission from the InAs on the mesa top attests to its good optical quality.

AB - Three-dimensionally confined GaAs/AlGaAs and InAs/GaAs structures on 〈100〉 oriented square mesas patterned onto GaAs(001) substrates are realized, in-situ, via size-reducing molecular beam epitaxy. Two stages of mesa top pinch-off involving ∼ {103} and subsequently {101} side facets are revealed. GaAs and InAs quantum boxes with lateral linear dimensions down to 40 nm and confined by AlGaAs and GaAs, respectively, are reported. For InAs, the strain relief in mesas is found to enhance the well known ∼ 2 ML thickness for three-dimensional island formation on unpatterned substrates to, remarkably, 〉 5 ML for mesa size ∼ 75 nm. Cathodoluminescence emission from the InAs on the mesa top attests to its good optical quality.

UR - http://www.scopus.com/inward/record.url?scp=0029306539&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(95)80226-3

DO - 10.1016/0022-0248(95)80226-3

M3 - Article

AN - SCOPUS:0029306539

SN - 0022-0248

VL - 150

SP - 311

EP - 316

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

In-situ fabrication of three-dimensionally confined GaAs and InAs volumes via growth on non-planar patterned GaAs(001) substrates

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this